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Title: Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1355081
Grant/Contract Number:  
SC0001304
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 118 Journal Issue: 18; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Singh, Simranjeet, Katoch, Jyoti, Zhu, Tiancong, Meng, Keng-Yuan, Liu, Tianyu, Brangham, Jack T., Yang, Fengyuan, Flatté, Michael E., and Kawakami, Roland K.. Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.118.187201.
Singh, Simranjeet, Katoch, Jyoti, Zhu, Tiancong, Meng, Keng-Yuan, Liu, Tianyu, Brangham, Jack T., Yang, Fengyuan, Flatté, Michael E., & Kawakami, Roland K.. Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields. United States. doi:10.1103/PhysRevLett.118.187201.
Singh, Simranjeet, Katoch, Jyoti, Zhu, Tiancong, Meng, Keng-Yuan, Liu, Tianyu, Brangham, Jack T., Yang, Fengyuan, Flatté, Michael E., and Kawakami, Roland K.. Tue . "Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields". United States. doi:10.1103/PhysRevLett.118.187201.
@article{osti_1355081,
title = {Strong Modulation of Spin Currents in Bilayer Graphene by Static and Fluctuating Proximity Exchange Fields},
author = {Singh, Simranjeet and Katoch, Jyoti and Zhu, Tiancong and Meng, Keng-Yuan and Liu, Tianyu and Brangham, Jack T. and Yang, Fengyuan and Flatté, Michael E. and Kawakami, Roland K.},
abstractNote = {},
doi = {10.1103/PhysRevLett.118.187201},
journal = {Physical Review Letters},
number = 18,
volume = 118,
place = {United States},
year = {Tue May 02 00:00:00 EDT 2017},
month = {Tue May 02 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.118.187201

Citation Metrics:
Cited by: 11 works
Citation information provided by
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Works referenced in this record:

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

Raman Spectrum of Graphene and Graphene Layers
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Electronic spin transport and spin precession in single graphene layers at room temperature
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  • Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita
  • Nature, Vol. 448, Issue 7153, p. 571-574
  • DOI: 10.1038/nature06037