skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Pressure-induced structural transition in chalcopyrite ZnSiP 2

Abstract

The pressure-dependent phase behavior of semiconducting chalcopyrite ZnSiP 2 was studied up to 30 GPa using in situ X-ray diffraction and Raman spectroscopy in a diamond-anvil cell. A structural phase transition to the rock salt type structure was observed between 27 and 30 GPa, which is accompanied by soft phonon mode behavior and simultaneous loss of Raman signal and optical transmission through the sample. The high-pressure rock salt type phase possesses cationic disorder as evident from broad features in the X-ray diffraction patterns. The behavior of the low-frequency Raman modes during compression establishes a two-stage, order-disorder phase transition mechanism. The phase transition is partially reversible, and the parent chalcopyrite structure coexists with an amorphous phase upon slow decompression to ambient conditions.

Authors:
; ; ; ; ORCiD logo; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1355051
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
ENGLISH
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Bhadram, Venkata S., Krishna, Lakshmi, Toberer, Eric S., Hrubiak, Rostislav, Greenberg, Eran, Prakapenka, Vitali B., and Strobel, Timothy A. Pressure-induced structural transition in chalcopyrite ZnSiP 2. United States: N. p., 2017. Web. doi:10.1063/1.4981889.
Bhadram, Venkata S., Krishna, Lakshmi, Toberer, Eric S., Hrubiak, Rostislav, Greenberg, Eran, Prakapenka, Vitali B., & Strobel, Timothy A. Pressure-induced structural transition in chalcopyrite ZnSiP 2. United States. doi:10.1063/1.4981889.
Bhadram, Venkata S., Krishna, Lakshmi, Toberer, Eric S., Hrubiak, Rostislav, Greenberg, Eran, Prakapenka, Vitali B., and Strobel, Timothy A. Tue . "Pressure-induced structural transition in chalcopyrite ZnSiP 2". United States. doi:10.1063/1.4981889.
@article{osti_1355051,
title = {Pressure-induced structural transition in chalcopyrite ZnSiP 2},
author = {Bhadram, Venkata S. and Krishna, Lakshmi and Toberer, Eric S. and Hrubiak, Rostislav and Greenberg, Eran and Prakapenka, Vitali B. and Strobel, Timothy A.},
abstractNote = {The pressure-dependent phase behavior of semiconducting chalcopyrite ZnSiP2 was studied up to 30 GPa using in situ X-ray diffraction and Raman spectroscopy in a diamond-anvil cell. A structural phase transition to the rock salt type structure was observed between 27 and 30 GPa, which is accompanied by soft phonon mode behavior and simultaneous loss of Raman signal and optical transmission through the sample. The high-pressure rock salt type phase possesses cationic disorder as evident from broad features in the X-ray diffraction patterns. The behavior of the low-frequency Raman modes during compression establishes a two-stage, order-disorder phase transition mechanism. The phase transition is partially reversible, and the parent chalcopyrite structure coexists with an amorphous phase upon slow decompression to ambient conditions.},
doi = {10.1063/1.4981889},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 110,
place = {United States},
year = {2017},
month = {5}
}

Works referenced in this record:

Hydrostatic limits of 11 pressure transmitting media
journal, March 2009

  • Klotz, S.; Chervin, J-C.; Munsch, P.
  • Journal of Physics D: Applied Physics, Vol. 42, Issue 7, Article No. 075413
  • DOI: 10.1088/0022-3727/42/7/075413