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Title: Growth of ordered and disordered ZnSnN 2

Abstract

A series of ZnSnN2 films has been grown by plasma assisted molecular beam epitaxy in order to investigate the possibility of controlled cation sublattice disorder as well as its effects on physical and electronic properties of the material. By varying the growth conditions, specifically either the metal to nitrogen flux ratio or the substrate temperature, the authors have confirmed the existence of both the hexagonal and orthorhombic phases of the material via synchrotron x-ray diffraction and in situ reflection high energy electron diffraction measurements. Here, the authors report the results of an initial mapping and analysis of the growth parameter space, as part of continuing efforts to improve material quality.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE; National Science Foundation (NSF)
OSTI Identifier:
1355050
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics; Journal Volume: 35; Journal Issue: 2
Country of Publication:
United States
Language:
ENGLISH
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Makin, Robert Allen, Senabulya, Nancy, Mathis, James, Feldberg, N., Miska, P., Clarke, Roy, and Durbin, Steven M. Growth of ordered and disordered ZnSnN 2. United States: N. p., 2017. Web. doi:10.1116/1.4978021.
Makin, Robert Allen, Senabulya, Nancy, Mathis, James, Feldberg, N., Miska, P., Clarke, Roy, & Durbin, Steven M. Growth of ordered and disordered ZnSnN 2. United States. doi:10.1116/1.4978021.
Makin, Robert Allen, Senabulya, Nancy, Mathis, James, Feldberg, N., Miska, P., Clarke, Roy, and Durbin, Steven M. Tue . "Growth of ordered and disordered ZnSnN 2". United States. doi:10.1116/1.4978021.
@article{osti_1355050,
title = {Growth of ordered and disordered ZnSnN 2},
author = {Makin, Robert Allen and Senabulya, Nancy and Mathis, James and Feldberg, N. and Miska, P. and Clarke, Roy and Durbin, Steven M.},
abstractNote = {A series of ZnSnN2 films has been grown by plasma assisted molecular beam epitaxy in order to investigate the possibility of controlled cation sublattice disorder as well as its effects on physical and electronic properties of the material. By varying the growth conditions, specifically either the metal to nitrogen flux ratio or the substrate temperature, the authors have confirmed the existence of both the hexagonal and orthorhombic phases of the material via synchrotron x-ray diffraction and in situ reflection high energy electron diffraction measurements. Here, the authors report the results of an initial mapping and analysis of the growth parameter space, as part of continuing efforts to improve material quality.},
doi = {10.1116/1.4978021},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 2,
volume = 35,
place = {United States},
year = {Tue Mar 21 00:00:00 EDT 2017},
month = {Tue Mar 21 00:00:00 EDT 2017}
}