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Title: Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

Abstract

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

Authors:
 [1];  [1];  [2]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Univ. of Wisconsin, Madison, WI (United States)
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1354777
Report Number(s):
DOE-UNL-SC0004876
DOE Contract Number:  
SC0004876
Resource Type:
Technical Report
Resource Relation:
Related Information: 1. H.Lee, T.H.Kim, J.J.Patzner, H.Lu, J.Lee, H.Zhou, W.Chang, M.K.Mahanthappa, E.Y.Tsymbal, A.Gruverman, and C.B.Eom, “Imprint Control of BaTiO3 Thin films via Chemically-induced Surface Polarization Pinning”, Nano Lett. 16, 2400-2406 (2016).2. P.Sharma, S.Ryu, J.D.Burton, T.R.Paudel, C.W.Bark, Z.Huang, Ariando, E.Y.Tsymbal, G.Catalan, C.B.Eom, and A.Gruverman, “Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity”, Nano Lett. 15, 3547-3551 (2015).3. P.Sharma, S.Ryu, Z.Viskadourakis, T.R.Paudel, H.Lee, C.Panagopoulos, E.Y.Tsymbal, C.B.Eom, and A.Gruverman, “Electro-Mechanics of Ferroelectric-like Behavior of LaAlO3 Thin Films”, Adv. Funct. Mat. 25, 6538-6544 (2015).4. A.Sokolov, O.Bak, H.Lu, S.Li, E.Y.Tsymbal and A.Gruverman, “Effect of epitaxial strain on tunneling electroresistance in ferroelectric tunnel junctions”, Nanotechnology 26, 305202 (2015).5. D.J.Kim, J.G.Connell, S.S.A.Seo, and A.Gruverman, “Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films”, Nanotechnology 27, 155705 (2016).6. J.Očenášek, H.Lu, C.W.Bark, C.B.Eom, J.Alcalá, G.Catalan, and A.Gruverman, “Nanomechanics of Flexoelectric Switching”, Phys. Rev B 92, 035417 (2015).
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; Resistive switching; scanning probe microscopy; complex oxides; ferroelectric tunnel junctions

Citation Formats

Gruverman, Alexei, Tsymbal, Evgeny Y., and Eom, Chang-Beom. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures. United States: N. p., 2017. Web. doi:10.2172/1354777.
Gruverman, Alexei, Tsymbal, Evgeny Y., & Eom, Chang-Beom. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures. United States. doi:10.2172/1354777.
Gruverman, Alexei, Tsymbal, Evgeny Y., and Eom, Chang-Beom. Wed . "Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures". United States. doi:10.2172/1354777. https://www.osti.gov/servlets/purl/1354777.
@article{osti_1354777,
title = {Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures},
author = {Gruverman, Alexei and Tsymbal, Evgeny Y. and Eom, Chang-Beom},
abstractNote = {This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.},
doi = {10.2172/1354777},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed May 03 00:00:00 EDT 2017},
month = {Wed May 03 00:00:00 EDT 2017}
}

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