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Title: High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

Abstract

(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION

Authors:
 [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1354671
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: 13th Joint Magnetism and Magnetic Materials (MMM)/Intermag Conference, San Diego, CA, USA, 20150111, 20150115
Country of Publication:
United States
Language:
English

Citation Formats

Allard, Jr, Lawrence Frederick. High Ms Fe16N2 thin film with Ag under layer on GaAs substrate. United States: N. p., 2016. Web.
Allard, Jr, Lawrence Frederick. High Ms Fe16N2 thin film with Ag under layer on GaAs substrate. United States.
Allard, Jr, Lawrence Frederick. Fri . "High Ms Fe16N2 thin film with Ag under layer on GaAs substrate". United States. https://www.osti.gov/servlets/purl/1354671.
@article{osti_1354671,
title = {High Ms Fe16N2 thin film with Ag under layer on GaAs substrate},
author = {Allard, Jr, Lawrence Frederick},
abstractNote = {(001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION},
doi = {},
url = {https://www.osti.gov/biblio/1354671}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {1}
}

Conference:
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