Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

Ngo, Thong Q.; Goble, Nicholas J.; Posadas, Agham; Kormondy, Kristy J.; Lu, Sirong; McDaniel, Martin D.; Jordan-Sweet, Jean; Smith, David J.; Gao, Xuan P. A.; Demkov, Alexander A.; Ekerdt, John G.

doi:10.1063/1.4930575

Title: Quasi-two-dimensional electron gas at the interface of γ-Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition

Journal Article · Tue Sep 15 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4930575· OSTI ID:1354507

Ngo, Thong Q. ^[1]; Goble, Nicholas J. ^[2]; Posadas, Agham ^[1];

^[1]; Lu, Sirong ^[3]; McDaniel, Martin D. ^[1]; Jordan-Sweet, Jean ^[4]; Smith, David J. ^[3]; Gao, Xuan P. A. ^[2]; Demkov, Alexander A. ^[1]; Ekerdt, John G. ^[1]

Univ. of Texas, Austin, TX (United States)
Case Western Reserve Univ., Cleveland, OH (United States)
Arizona State Univ., Tempe, AZ (United States)
IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)

We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al₂O₃/TiO₂-terminated SrTiO₃ (STO) grown by atomic layer deposition (ALD). The ALD growth of Al₂O₃ on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al₂O₃ films. As-deposited Al₂O₃ films grown above 300 °C were crystalline with the γ-Al₂O₃ phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al₂O₃/STO interface, indicating that a Ti³⁺ feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al₂O₃ at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ~4 and 3000 cm² V^–1 s^–1 at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al₂O₃ layer. In conclusion, the Ti³⁺ signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; N00014-10-10489; FA9550-12-10494; FA9550-12-1-0441; AC02-98CH10886

OSTI ID:: 1354507

Report Number(s):: BNL-113024-2016-JA

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 11; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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Highly conductive two-dimensional electron gas at the interface of Al2O3/SrTiO3 Zhang, Zhaoting; Yan, Hong; Wang, Shuanhu Journal of Materials Science, Vol. 54, Issue 6 https://doi.org/10.1007/s10853-018-3167-6	journal	November 2018
Anomalous orbital structure in a spinel–perovskite interface Cao, Yanwei; Liu, Xiaoran; Shafer, Padraic npj Quantum Materials, Vol. 1, Issue 1 https://doi.org/10.1038/npjquantmats.2016.9	journal	August 2016
Control of TiN oxidation upon atomic layer deposition of oxides Filatova, E. O.; Sakhonenkov, S. S.; Konashuk, A. S. Physical Chemistry Chemical Physics, Vol. 20, Issue 44 https://doi.org/10.1039/c8cp06076b	journal	January 2018
Scavenging of oxygen from SrTiO ₃ during oxide thin film deposition and the formation of interfacial 2DEGs Posadas, Agham B.; Kormondy, Kristy J.; Guo, Wei Journal of Applied Physics, Vol. 121, Issue 10 https://doi.org/10.1063/1.4978248	journal	March 2017
Effect of SrTiO ₃ oxygen vacancies on the conductivity of LaTiO ₃ /SrTiO ₃ heterostructures Edmondson, Bryce I.; Liu, Shuhaog; Lu, Sirong Journal of Applied Physics, Vol. 124, Issue 18 https://doi.org/10.1063/1.5046081	journal	November 2018
Quasi-two-dimensional electron gas at γ-Al ₂ O ₃ /SrTiO ₃ heterointerfaces fabricated by spin coating method Li, Ming; Yan, Hong; Zhang, Zhaoting Journal of Applied Physics, Vol. 124, Issue 14 https://doi.org/10.1063/1.5047585	journal	October 2018
Metallic conduction and ferromagnetism in M Al ₂ O ₄ /SrTiO ₃ spinel/perovskite heterostructures ( M = Fe, Co, Ni) Zhang, Yu; Gan, Yulin; Zhang, Hongrui Applied Physics Letters, Vol. 113, Issue 26 https://doi.org/10.1063/1.5063540	journal	December 2018
Orbital-adapted electronic structure and anisotropic transport in $γ − {Al}_{2} O_{3} / {SrTiO}_{3}$ heterostructure Yang, Xiaoping; Su, Haibin; Wu, Gang Physical Review Materials, Vol. 4, Issue 1 https://doi.org/10.1103/physrevmaterials.4.016001	journal	January 2020

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Title: Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

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Title: Quasi-two-dimensional electron gas at the interface of γ-Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition