Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Ozcan, Ahmet S.; Lavoie, Christian; Alptekin, Emre; Jordan-Sweet, Jean; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

doi:10.1063/1.4947054

Title: Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Journal Article · Tue Apr 19 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4947054· OSTI ID:1354377

Ozcan, Ahmet S. ^[1]; Lavoie, Christian ^[2]; Alptekin, Emre ^[3]; Jordan-Sweet, Jean ^[2]; Zhu, Frank ^[3];

^[4]; Pfeifer, Brian D. ^[4]; LaRose, J. D. ^[4]; Russell, N. M. ^[4]

IBM Almaden Research Center, San Jose, CA (United States); IBM SRDC, Hopewell Junction, NY (United States)
IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
IBM Semiconductor Research and Development Center, Hopewell Junction, NY (United States)
TEL Epion Inc., Billerica, MA (United States)

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. Here, this novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; AC02-98CH10886

OSTI ID:: 1354377

Alternate ID(s):: OSTI ID: 1421095

Report Number(s):: BNL-112893-2016-JA

Journal Information:: Journal of Applied Physics, Vol. 119, Issue 15; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 3 works

Citation information provided by
Web of Science

References (14)

Towards implementation of a nickel silicide process for CMOS technologies Lavoie, C.; d’Heurle, F. M.; Detavernier, C. Microelectronic Engineering, Vol. 70, Issue 2-4 https://doi.org/10.1016/S0167-9317(03)00380-0	journal	November 2003
Morphological and phase stability of nickel–germanosilicide on Si1−xGex under thermal stress Jarmar , T.; Seger, J.; Ericson, F. Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1522491	journal	December 2002
Formation of Ni(Pt) Germanosilicide Using a Sacrificial Si Cap Layer Chen, Yi-Wei; Chang, Yu-Lan; Chen, Yi-Cheng 2007 IEEE International Interconnect Technology Conferencee https://doi.org/10.1109/IITC.2007.382345	conference	June 2007
Morphological instability of NiSi1−uGeu on single-crystal and polycrystalline Si1−xGex Seger, J.; Jarmar, T.; Zhang, Z. -B. Journal of Applied Physics, Vol. 96, Issue 4 https://doi.org/10.1063/1.1766088	journal	August 2004
Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance Gaudet, S.; Coia, C.; Desjardins, P. Journal of Applied Physics, Vol. 107, Issue 9 https://doi.org/10.1063/1.3327451	journal	May 2010
Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100) Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean Applied Physics Letters, Vol. 102, Issue 17 https://doi.org/10.1063/1.4801928	journal	April 2013
Gas cluster ion beam infusion processing of semiconductors MacCrimmon, R.; Hautala, J.; Gwinn, M. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 242, Issue 1-2 https://doi.org/10.1016/j.nimb.2005.08.074	journal	January 2006
Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources IEEE Electron Device Letters, Vol. 31, Issue 7 https://doi.org/10.1109/LED.2010.2048992	journal	July 2010
Materials processing by gas cluster ion beams Yamada, I. Materials Science and Engineering: R: Reports, Vol. 34, Issue 6 https://doi.org/10.1016/S0927-796X(01)00034-1	journal	October 2001
Uniaxial-process-induced strained-Si: extending the CMOS roadmap Thompson, S. E. IEEE Transactions on Electron Devices, Vol. 53, Issue 5 https://doi.org/10.1109/TED.2006.872088	journal	May 2006
A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering Qiu, Zhijun; Zhang, Zhen; Ostling, Mikael IEEE Transactions on Electron Devices, Vol. 55, Issue 1 https://doi.org/10.1109/TED.2007.911080	journal	January 2008
Etching, smoothing, and deposition with gas-cluster ion beam technology Greer, J. A.; Fenner, D. B.; Hautala, J. Surface and Coatings Technology, Vol. 133-134 https://doi.org/10.1016/S0257-8972(00)00876-8	journal	November 2000
Nickel-based contact metallization for SiGe MOSFETs: progress and challenges Zhang, S. -L. Microelectronic Engineering, Vol. 70, Issue 2-4 https://doi.org/10.1016/S0167-9317(03)00369-1	journal	November 2003
Challenges of nickel silicidation in CMOS technologies Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet Microelectronic Engineering, Vol. 137 https://doi.org/10.1016/j.mee.2014.12.013	journal	April 2015

Similar Records

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Journal Article · Thu Apr 21 00:00:00 EDT 2016 · Journal of Applied Physics · OSTI ID:1354377

Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; +5 more

Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing

Journal Article · Sat Jul 15 00:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:1354377

Ko, J H; Jang, C H; Kim, S H; +2 more

Challenges of nickel silicidation in CMOS technologies

Journal Article · Wed Apr 01 00:00:00 EDT 2015 · Microelectronic Engineering · OSTI ID:1354377

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet; +9 more

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
C-MOS
X-ray diffraction
Materials modification
Epitaxy
Ion implantation
Semiconductor device fabrication
Depth profiling techniques
Scanning electron microscopy
Silicide
Solid solid interfaces

Title: Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Citation Formats

References (14)

Similar Records

Related Subjects