Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe
Journal Article
·
· Journal of Applied Physics
- IBM Almaden Research Center, San Jose, CA (United States); IBM SRDC, Hopewell Junction, NY (United States)
- IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
- IBM Semiconductor Research and Development Center, Hopewell Junction, NY (United States)
- TEL Epion Inc., Billerica, MA (United States)
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. Here, this novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704; AC02-98CH10886
- OSTI ID:
- 1354377
- Alternate ID(s):
- OSTI ID: 1421095
- Report Number(s):
- BNL-112893-2016-JA
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 15; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 3 works
Citation information provided by
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