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Title: CVD growth and properties of boron phosphide on 3C-SiC

Abstract

Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000–1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths across the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) <011>BP||(100) <011>3C-SiC and (111)View the MathML sourceBP||(111)View the MathML source3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1354320
Report Number(s):
BNL-112836-2016-JA
Journal ID: ISSN 0022-0248
DOE Contract Number:  
SC00112704
Resource Type:
Journal Article
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 449; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; B2. Semiconducting III–V materials; A3. Hydride vapor phase epitaxy; A1. Characterization; A1. High resolution X-ray diffraction; A1. X-ray topography; A1. Defects

Citation Formats

Padavala, Balabalaji, Frye, C. D., Wang, Xuejing, Raghothamachar, Balaji, and Edgar, J. H. CVD growth and properties of boron phosphide on 3C-SiC. United States: N. p., 2016. Web. doi:10.1016/j.jcrysgro.2016.05.031.
Padavala, Balabalaji, Frye, C. D., Wang, Xuejing, Raghothamachar, Balaji, & Edgar, J. H. CVD growth and properties of boron phosphide on 3C-SiC. United States. https://doi.org/10.1016/j.jcrysgro.2016.05.031
Padavala, Balabalaji, Frye, C. D., Wang, Xuejing, Raghothamachar, Balaji, and Edgar, J. H. Tue . "CVD growth and properties of boron phosphide on 3C-SiC". United States. https://doi.org/10.1016/j.jcrysgro.2016.05.031.
@article{osti_1354320,
title = {CVD growth and properties of boron phosphide on 3C-SiC},
author = {Padavala, Balabalaji and Frye, C. D. and Wang, Xuejing and Raghothamachar, Balaji and Edgar, J. H.},
abstractNote = {Improving the crystalline quality of boron phosphide (BP) is essential for realizing its full potential in semiconductor device applications. In this study, 3C-SiC was tested as a substrate for BP epitaxy. BP films were grown on 3C-SiC(100)/Si, 3C-SiC(111)/Si, and 3C-SiC(111)/4H-SiC(0001) substrates in a horizontal chemical vapor deposition (CVD) system. Films were produced with good crystalline orientation and morphological features in the temperature range of 1000–1200 °C using a PH3+B2H6+H2 mixture. Rotational twinning was absent in the BP due to the crystal symmetry-matching with 3C-SiC. Confocal 3D Raman imaging of BP films revealed primarily uniform peak shift and peak widths across the scanned area, except at defects on the surface. Synchrotron white beam X-ray topography showed the epitaxial relationship between BP and 3C-SiC was (100) <011>BP||(100) <011>3C-SiC and (111)View the MathML sourceBP||(111)View the MathML source3C-SiC. Scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis indicated residual tensile strain in the films and improved crystalline quality at temperatures below 1200 °C. These results indicated that BP properties could be further enhanced by employing high quality bulk 3C-SiC or 3C-SiC epilayers on 4H-SiC substrates.},
doi = {10.1016/j.jcrysgro.2016.05.031},
url = {https://www.osti.gov/biblio/1354320}, journal = {Journal of Crystal Growth},
issn = {0022-0248},
number = C,
volume = 449,
place = {United States},
year = {2016},
month = {5}
}