Growth and ferroelectric properties of sol–gel derived Bi(Mg1/2Zr1/2)O3–PbTiO3 thin films
The electrical properties included temperature-dependent polarization of (1-x)Bi(Mg1/2Zr1/2)O3–xPbTiO3 (BMZ–xPT) new ferroelectric films were investigated. The films with 220 nm thickness grown on Pt(111)/Ti/SiO2/Si substrates via sol–gel method were well crystallized with a phase-pure perovskite structure and homogeneous microstructure. Saturated polarization hysteresis loops are observed for all BMZ–xPT compounds, and BMZ–0.85PT films with high (100) orientation show a small leakage and remanent polarization of 36.1 μC cm-2, which is comparable to the (100)-oriented BiScO3–PbTiO3 thin films. The present films have high dielectric constants about 544-833. Furthermore, the polarization with elevated temperature slightly decreases, exhibiting stable ferroelectric properties and potentials for memory applications above room temperature such as non-volatile ferroelectric random access memories.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1353251
- Journal Information:
- Ceramics International, Vol. 40, Issue 4; ISSN 0272-8842
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- ENGLISH
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