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Title: Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO 3 -based thin films by chemical solution deposition

Authors:
; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
FOREIGN
OSTI Identifier:
1353244
Resource Type:
Journal Article
Journal Name:
Journal of Materials Chemistry. C
Additional Journal Information:
Journal Volume: 3; Journal Issue: 18; Journal ID: ISSN 2050-7526
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Zhang, Linxing, Chen, Jun, Cao, Jiangli, He, Dongyu, and Xing, Xianran. Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO 3 -based thin films by chemical solution deposition. United States: N. p., 2015. Web. doi:10.1039/C5TC00814J.
Zhang, Linxing, Chen, Jun, Cao, Jiangli, He, Dongyu, & Xing, Xianran. Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO 3 -based thin films by chemical solution deposition. United States. doi:10.1039/C5TC00814J.
Zhang, Linxing, Chen, Jun, Cao, Jiangli, He, Dongyu, and Xing, Xianran. Thu . "Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO 3 -based thin films by chemical solution deposition". United States. doi:10.1039/C5TC00814J.
@article{osti_1353244,
title = {Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO 3 -based thin films by chemical solution deposition},
author = {Zhang, Linxing and Chen, Jun and Cao, Jiangli and He, Dongyu and Xing, Xianran},
abstractNote = {},
doi = {10.1039/C5TC00814J},
journal = {Journal of Materials Chemistry. C},
issn = {2050-7526},
number = 18,
volume = 3,
place = {United States},
year = {2015},
month = {1}
}

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