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Title: An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

Abstract

Here, we describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

Authors:
 [1];  [1]; ORCiD logo [1];  [2];  [1];  [1]; ORCiD logo [3];  [1];  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States)
  2. Northern Illinois Univ., DeKalb, IL (United States)
  3. Fairview Assoc., Jackson, WY (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Materials Sciences and Engineering Division
OSTI Identifier:
1353038
Alternate Identifier(s):
OSTI ID: 1373969
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 88; Journal Issue: 3; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Ju, Guangxu, Highland, Matthew J., Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A., Zhou, Hua, Brennan, Sean M., Stephenson, G. Brian, and Fuoss, Paul H. An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides. United States: N. p., 2017. Web. doi:10.1063/1.4978656.
Ju, Guangxu, Highland, Matthew J., Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A., Zhou, Hua, Brennan, Sean M., Stephenson, G. Brian, & Fuoss, Paul H. An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides. United States. doi:10.1063/1.4978656.
Ju, Guangxu, Highland, Matthew J., Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A., Zhou, Hua, Brennan, Sean M., Stephenson, G. Brian, and Fuoss, Paul H. Tue . "An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides". United States. doi:10.1063/1.4978656. https://www.osti.gov/servlets/purl/1353038.
@article{osti_1353038,
title = {An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides},
author = {Ju, Guangxu and Highland, Matthew J. and Yanguas-Gil, Angel and Thompson, Carol and Eastman, Jeffrey A. and Zhou, Hua and Brennan, Sean M. and Stephenson, G. Brian and Fuoss, Paul H.},
abstractNote = {Here, we describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.},
doi = {10.1063/1.4978656},
journal = {Review of Scientific Instruments},
number = 3,
volume = 88,
place = {United States},
year = {Tue Mar 21 00:00:00 EDT 2017},
month = {Tue Mar 21 00:00:00 EDT 2017}
}

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  • Cited by 1
  • The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the In{sub x}Ga{sub 1-x}N with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thicknessmore » GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra.« less
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  • Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In{sub x}Ga{sub 1-x}N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
  • (GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers, 0{lt}x{lt}0.22, have been grown by metal{endash}organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x=0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {l_brace}115{r_brace}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {l_brace}115{r_brace}B surface faceting associated with the phase separation. {copyright} {ital 1999 American Institute of Physics.}