skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4978656· OSTI ID:1353038

Here, we describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Materials Sciences and Engineering Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1353038
Alternate ID(s):
OSTI ID: 1373969
Journal Information:
Review of Scientific Instruments, Vol. 88, Issue 3; ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

References (30)

Ion-assisted nucleation and growth of GaN on sapphire(0001) journal August 1998
Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals journal August 2014
Nitride-MBE system for in situ synchrotron X-ray measurements journal April 2016
Revealing the atomic dance journal September 2009
Thermal diffusivity and thermal conductivity of single-crystal MgO and Al2O3 and related compounds as a function of temperature journal January 2014
From Grain Boundaries to Single Defects: A Review of Coherent Methods for Materials Imaging in the X-ray Sciences journal August 2013
High temperature refractive indices of GaN journal June 2006
Indium adsorption on GaN under metal-organic chemical vapor deposition conditions journal October 2006
Surface Sensitive X-Ray Scattering journal August 1990
GaN Nucleation and Growth on Sapphire (0001): Incorporation and Interlayer Transport journal November 1999
Observation of speckle by diffraction with coherent X-rays journal August 1991
Surface X-Ray Speckles: Coherent Surface Diffraction from Au(001) journal October 2009
Coherent X-Ray Study of Fluctuations during Domain Coarsening journal December 1998
Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography journal September 2012
A tensorial approach to computational continuum mechanics using object-oriented techniques journal January 1998
Laser interferometric thermometry for substrate temperature measurement journal January 1991
Lattice parameters and thermal expansion of GaN journal January 2000
Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy journal December 2014
Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN journal January 1999
Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth journal January 2013
High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process journal January 2007
X-ray photon correlation spectroscopy journal August 2014
X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth journal June 2001
X-ray characterization of GaN and related materials at growth temperatures–system design and measurements journal September 2011
Index of refraction of sapphire between 24 and 1060°C for wavelengths of 633 and 799 nm journal January 1986
The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C journal November 2008
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy journal March 2014
Ptychographic x-ray imaging of surfaces on crystal truncation rod journal March 2015
Novel metalorganic chemical vapor deposition system for GaN growth journal May 1991
Experimental considerations for in situ X-ray scattering analysis of OMVPE growth
  • Brennan, S.; Fuoss, P. H.; Kahn, J. L.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 291, Issue 1-2 https://doi.org/10.1016/0168-9002(90)90038-8
journal May 1990

Cited By (3)


Similar Records

The Coherent X-ray Imaging (CXI) Instrument at the Linac Coherent Light Source (LCLS)
Journal Article · Tue Aug 16 00:00:00 EDT 2011 · New J.Phys. 12:035024,2010 · OSTI ID:1353038

A high-transparency, micro-patternable chip for X-ray diffraction analysis of microcrystals under native growth conditions
Journal Article · Sat Sep 26 00:00:00 EDT 2015 · Acta Crystallographica. Section D: Biological Crystallography · OSTI ID:1353038

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications
Conference · Tue Jan 01 00:00:00 EST 2008 · OSTI ID:1353038