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Title: Resonant optical spectroscopy and coherent control of C r 4 + spin ensembles in SiC and GaN

Abstract

Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr 4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects’ zero-phonon lines. Lastly, these characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.

Authors:
 [1];  [2];  [2];  [2];  [3];  [3];  [2]
  1. Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  2. Univ. of Chicago, Chicago, IL (United States)
  3. Linkoping Univ., Linkoping (Sweden)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Materials Sciences and Engineering Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); U.S. Army Research Laboratory, U.S. Army Research Office (ARO); Knut and Alice Wallenberg Foundation; Linkopng Linnaeus Initiative for Novel Functional Materials (LiLi-NFM)
OSTI Identifier:
1353030
Alternate Identifier(s):
OSTI ID: 1341283
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Koehl, William F., Diler, Berk, Whiteley, Samuel J., Bourassa, Alexandre, Son, N. T., Janzén, Erik, and Awschalom, David D. Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.035207.
Koehl, William F., Diler, Berk, Whiteley, Samuel J., Bourassa, Alexandre, Son, N. T., Janzén, Erik, & Awschalom, David D. Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN. United States. doi:10.1103/PhysRevB.95.035207.
Koehl, William F., Diler, Berk, Whiteley, Samuel J., Bourassa, Alexandre, Son, N. T., Janzén, Erik, and Awschalom, David D. Sun . "Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN". United States. doi:10.1103/PhysRevB.95.035207. https://www.osti.gov/servlets/purl/1353030.
@article{osti_1353030,
title = {Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN},
author = {Koehl, William F. and Diler, Berk and Whiteley, Samuel J. and Bourassa, Alexandre and Son, N. T. and Janzén, Erik and Awschalom, David D.},
abstractNote = {Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing interest in the identification of new classes of defect spin that can be controlled optically. Here we demonstrate ensemble optical spin polarization and optically detected magnetic resonance (ODMR) of the S = 1 electronic ground state of chromium (Cr4+) impurities in silicon carbide (SiC) and gallium nitride (GaN). Polarization is made possible by the narrow optical linewidths of these ensembles (< 8.5 GHz), which are similar in magnitude to the ground state zero-field spin splitting energies of the ions at liquid helium temperatures. We therefore are able to optically resolve individual spin sublevels within the ensembles at low magnetic fields using resonant excitation from a cavity-stabilized, narrow-linewidth laser. Additionally, these near-infrared emitters possess exceptionally weak phonon sidebands, ensuring that > 73% of the overall optical emission is contained with the defects’ zero-phonon lines. Lastly, these characteristics make this semiconductor-based, transition metal impurity system a promising target for further study in the ongoing effort to integrate optically active quantum states within common optoelectronic materials.},
doi = {10.1103/PhysRevB.95.035207},
journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 95,
place = {United States},
year = {2017},
month = {1}
}

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    Works referencing / citing this record:

    Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology
    journal, July 2019


    Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology
    journal, July 2019