skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

Abstract

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.

Authors:
 [1]; ORCiD logo [2];  [3];  [4];  [5]; ORCiD logo [6];  [6];  [7];  [6];  [8]; ORCiD logo [4]; ORCiD logo [9];  [10];  [6]
  1. Stanford Univ., CA (United States). Dept. of Electrical Engineering; Kwangwoon Univ., Seoul (Korea). Dept. of Electrical Engineering
  2. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Ulsan National Inst. of Science and Technology (Korea). Dept. of Physics
  3. Ulsan National Inst. of Science and Technology (Korea). Dept. of Energy Engineering
  4. Ulsan National Inst. of Science and Technology (Korea). School of Materials Science and Engineering
  5. Queen's Univ., Belfast, Northern Ireland (United Kingdom). School of Mathematics and Physics
  6. Stanford Univ., CA (United States). Dept. of Chemical Engineering
  7. Stanford Univ., CA (United States). Dept. of Chemical Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
  8. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Queen's Univ., Belfast, Northern Ireland (United Kingdom). School of Mathematics and Physics; Queen's Univ., Belfast, Northern Ireland (United Kingdom). School of Chemistry and Chemical Engineering
  9. Ulsan National Inst. of Science and Technology (Korea). Dept. of Energy Engineering; Ulsan National Inst. of Science and Technology (Korea). Dept. of Chemistry
  10. Stanford Univ., CA (United States). Dept. of Electrical Engineering
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
National Science Foundation (NSF); National Research Foundation of Korea (NRF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1352885
Grant/Contract Number:
1.170005.01; 2009-0082580; 2015R1A2A2A01006992; AC02-76SF00515; FOA-0000654-1588; SC0016523; M8407MPH
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 5; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Hexagonal boron nitride; epitaxy of organic molecules; van der Waals heterostructure; organic field-effect transistors

Citation Formats

Lee, Tae Hoon, Kim, Kwanpyo, Kim, Gwangwoo, Park, Hyo Ju, Scullion, Declan, Shaw, Leo, Kim, Myung-Gil, Gu, Xiaodan, Bae, Won-Gyu, Santos, Elton J. G., Lee, Zonghoon, Shin, Hyeon Suk, Nishi, Yoshio, and Bao, Zhenan. Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors. United States: N. p., 2017. Web. doi:10.1021/acs.chemmater.6b05517.
Lee, Tae Hoon, Kim, Kwanpyo, Kim, Gwangwoo, Park, Hyo Ju, Scullion, Declan, Shaw, Leo, Kim, Myung-Gil, Gu, Xiaodan, Bae, Won-Gyu, Santos, Elton J. G., Lee, Zonghoon, Shin, Hyeon Suk, Nishi, Yoshio, & Bao, Zhenan. Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors. United States. doi:10.1021/acs.chemmater.6b05517.
Lee, Tae Hoon, Kim, Kwanpyo, Kim, Gwangwoo, Park, Hyo Ju, Scullion, Declan, Shaw, Leo, Kim, Myung-Gil, Gu, Xiaodan, Bae, Won-Gyu, Santos, Elton J. G., Lee, Zonghoon, Shin, Hyeon Suk, Nishi, Yoshio, and Bao, Zhenan. Mon . "Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors". United States. doi:10.1021/acs.chemmater.6b05517. https://www.osti.gov/servlets/purl/1352885.
@article{osti_1352885,
title = {Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors},
author = {Lee, Tae Hoon and Kim, Kwanpyo and Kim, Gwangwoo and Park, Hyo Ju and Scullion, Declan and Shaw, Leo and Kim, Myung-Gil and Gu, Xiaodan and Bae, Won-Gyu and Santos, Elton J. G. and Lee, Zonghoon and Shin, Hyeon Suk and Nishi, Yoshio and Bao, Zhenan},
abstractNote = {Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V–1 s–1 and a maximal mobility of 2.9 cm2 V–1 s–1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.},
doi = {10.1021/acs.chemmater.6b05517},
journal = {Chemistry of Materials},
number = 5,
volume = 29,
place = {United States},
year = {Mon Feb 27 00:00:00 EST 2017},
month = {Mon Feb 27 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7works
Citation information provided by
Web of Science

Save / Share:
  • Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m{sup −1} K{sup −1}, is lower than the bulk basal plane value (390 W m{sup −1} K{sup −1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.
  • Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.
  • We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be wellmore » suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.« less