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Title: Growth and electrical transport properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals

Abstract

Here, we report the physical properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals. We also deposited the manganite films using oxide molecular beam epitaxy on flux-grown (001)-oriented iridate crystals. Temperature-dependent magnetotransport and x-ray magnetic circular dichroism measurements reveal the presence of a ferromagnetic metallic ground state in the films, consistent with films grown on SrTiO 3 and La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 . A parallel resistance model is used to separate conduction effects within the Sr 2 IrO 4 substrate and the La 0.7 Sr 0.3 MnO 3 thin films, revealing that the measured resistance maximum does not correspond to the manganite Curie temperature but results from a convolution of properties of the near-insulating substrate and metallic film. Furthermore, the ability to grow and characterize epitaxial perovskites on Sr 2 IrO 4 crystals enables a new route for studying magnetism at oxide interfaces in the presence of strong spin-orbit interactions.

Authors:
 [1];  [2];  [3];  [3];  [1]
  1. Drexel Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1352797
Alternate Identifier(s):
OSTI ID: 1352463
Grant/Contract Number:
AC05-00OR22725; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Moon, E. J., May, A. F., Shafer, P., Arenholz, E., and May, S. J. Growth and electrical transport properties of La0.7Sr0.3MnO3 thin films on Sr2IrO4 single crystals. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.155135.
Moon, E. J., May, A. F., Shafer, P., Arenholz, E., & May, S. J. Growth and electrical transport properties of La0.7Sr0.3MnO3 thin films on Sr2IrO4 single crystals. United States. doi:10.1103/PhysRevB.95.155135.
Moon, E. J., May, A. F., Shafer, P., Arenholz, E., and May, S. J. Thu . "Growth and electrical transport properties of La0.7Sr0.3MnO3 thin films on Sr2IrO4 single crystals". United States. doi:10.1103/PhysRevB.95.155135. https://www.osti.gov/servlets/purl/1352797.
@article{osti_1352797,
title = {Growth and electrical transport properties of La0.7Sr0.3MnO3 thin films on Sr2IrO4 single crystals},
author = {Moon, E. J. and May, A. F. and Shafer, P. and Arenholz, E. and May, S. J.},
abstractNote = {Here, we report the physical properties of La 0.7 Sr 0.3 MnO 3 thin films on Sr 2 IrO 4 single crystals. We also deposited the manganite films using oxide molecular beam epitaxy on flux-grown (001)-oriented iridate crystals. Temperature-dependent magnetotransport and x-ray magnetic circular dichroism measurements reveal the presence of a ferromagnetic metallic ground state in the films, consistent with films grown on SrTiO 3 and La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 . A parallel resistance model is used to separate conduction effects within the Sr 2 IrO 4 substrate and the La 0.7 Sr 0.3 MnO 3 thin films, revealing that the measured resistance maximum does not correspond to the manganite Curie temperature but results from a convolution of properties of the near-insulating substrate and metallic film. Furthermore, the ability to grow and characterize epitaxial perovskites on Sr 2 IrO 4 crystals enables a new route for studying magnetism at oxide interfaces in the presence of strong spin-orbit interactions.},
doi = {10.1103/PhysRevB.95.155135},
journal = {Physical Review B},
number = 15,
volume = 95,
place = {United States},
year = {Thu Apr 20 00:00:00 EDT 2017},
month = {Thu Apr 20 00:00:00 EDT 2017}
}

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