High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Shen, Xiao; Pennycook, Timothy J.; Hernandez-Martin, David; Pérez, Ana; Puzyrev, Yevgeniy S.; Liu, Yaohua; te Velthuis, Suzanne G. E.; Freeland, John W.; Shafer, Padraic; Zhu, Chenhui; Varela, Maria; Leon, Carlos; Sefrioui, Zouhair; Santamaria, Jacobo; Pantelides, Sokrates T.

doi:10.1002/admi.201600086

Title: High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Journal Article · Fri May 27 00:00:00 EDT 2016 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201600086· OSTI ID:1311245

Shen, Xiao ^[1]; Pennycook, Timothy J. ^[2]; Hernandez-Martin, David ^[3]; Pérez, Ana ^[3]; Puzyrev, Yevgeniy S. ^[4]; Liu, Yaohua ^[5]; te Velthuis, Suzanne G. E. ^[6]; Freeland, John W. ^[7]; Shafer, Padraic ^[7]; Zhu, Chenhui ^[7]; Varela, Maria ^[8]; Leon, Carlos ^[3]; Sefrioui, Zouhair ^[3]; Santamaria, Jacobo ^[3]; Pantelides, Sokrates T. ^[9]

Vanderbilt Univ., Nashville, TN (United States); University of Memphis, TN (United States)
SuperSTEM Laboratory, Daresbury (United Kingdom); Oxford University (United Kingdom)
Complutense University of Madrid (Spain)
Vanderbilt Univ., Nashville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Complutense University of Madrid (Spain); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La_0.7Ca_0.3MnO₃/PrBa₂Cu₃O₇ bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554; AC02-06CH11357; AC02-05CH11231; DMR130121; AC02-06CH11357

OSTI ID:: 1311245

Alternate ID(s):: OSTI ID: 1352661; OSTI ID: 1456954; OSTI ID: 1597786

Journal Information:: Advanced Materials Interfaces, Vol. 3, Issue 16; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (40)

Memristor-The missing circuit element Chua, L. IEEE Transactions on Circuit Theory, Vol. 18, Issue 5 https://doi.org/10.1109/TCT.1971.1083337	journal	January 1971
Memory effects in complex materials and nanoscale systems Pershin, Yuriy V.; Di Ventra, Massimiliano Advances in Physics, Vol. 60, Issue 2 https://doi.org/10.1080/00018732.2010.544961	journal	April 2011
Nanoscale Memristor Device as Synapse in Neuromorphic Systems Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit Nano Letters, Vol. 10, Issue 4, p. 1297-1301 https://doi.org/10.1021/nl904092h	journal	April 2010
Memristive devices for computing Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R. Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24 https://doi.org/10.1038/nnano.2012.240	journal	January 2013
The missing memristor found Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R. Nature, Vol. 453, Issue 7191 https://doi.org/10.1038/nature06932	journal	May 2008
Current switching of resistive states in magnetoresistive manganites Asamitsu, A.; Tomioka, Y.; Kuwahara, H. Nature, Vol. 388, Issue 6637 https://doi.org/10.1038/40363	journal	July 1997
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory Jo, Sung Hyun; Lu, Wei Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl073225h	journal	February 2008
Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells Goux, Ludovic; Lisoni, Judit G.; Wang, Xin Peng IEEE Transactions on Electron Devices, Vol. 56, Issue 10 https://doi.org/10.1109/TED.2009.2028378	journal	October 2009
Molecularly inherent voltage-controlled conductance switching Blum, Amy Szuchmacher; Kushmerick, James G.; Long, David P. Nature Materials, Vol. 4, Issue 2 https://doi.org/10.1038/nmat1309	journal	January 2005
A ferroelectric memristor Chanthbouala, André; Garcia, Vincent; Cherifi, Ryan O. Nature Materials, Vol. 11, Issue 10 https://doi.org/10.1038/nmat3415	journal	September 2012
Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion IEEE Electron Device Letters, Vol. 30, Issue 3 https://doi.org/10.1109/LED.2008.2012270	journal	March 2009
Giant Electroresistance of Super-tetragonal BiFeO ₃ -Based Ferroelectric Tunnel Junctions Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane ACS Nano, Vol. 7, Issue 6 https://doi.org/10.1021/nn401378t	journal	May 2013
Electric-field-assisted switching in magnetic tunnel junctions Wang, Wei-Gang; Li, Mingen; Hageman, Stephen Nature Materials, Vol. 11, Issue 1 https://doi.org/10.1038/nmat3171	journal	November 2011
Electric-field control of local ferromagnetism using a magnetoelectric multiferroic Chu, Ying-Hao; Martin, Lane W.; Holcomb, Mikel B. Nature Materials, Vol. 7, Issue 6, p. 478-482 https://doi.org/10.1038/nmat2184	journal	April 2008
Ferroelectric Control of Spin Polarization Garcia, V.; Bibes, M.; Bocher, L. Science, Vol. 327, Issue 5969 https://doi.org/10.1126/science.1184028	journal	January 2010
Interface-induced room-temperature multiferroicity in BaTiO3 Valencia, S.; Crassous, A.; Bocher, L. Nature Materials, Vol. 10, Issue 10 https://doi.org/10.1038/nmat3098	journal	August 2011
Magnetic “Dead” Layer at a Complex Oxide Interface Luo, Weidong; Pennycook, Stephen J.; Pantelides, Sokrates T. Physical Review Letters, Vol. 101, Issue 24 https://doi.org/10.1103/PhysRevLett.101.247204	journal	December 2008
Reversible electric-field control of magnetization at oxide interfaces Cuellar, F. A.; Liu, Y. H.; Salafranca, J. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5215	journal	June 2014
Vacancy breathing by grain boundaries—a mechanism of memristive switching in polycrystalline oxides Shen, Xiao; Puzyrev, Yevgeniy S.; Pantelides, Sokrates T. MRS Communications, Vol. 3, Issue 3 https://doi.org/10.1557/mrc.2013.32	journal	September 2013
2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO ₃ Shen, Xiao; Yin, Kuibo; Puzyrev, Yevgeniy S. Advanced Electronic Materials, Vol. 1, Issue 5 https://doi.org/10.1002/aelm.201500019	journal	March 2015
Electric-pulse-induced resistive switching effect enhanced by a ferroelectric buffer on the Pr0.7Ca0.3MnO3 thin film Xing, Z. W.; Wu, N. J.; Ignatiev, A. Applied Physics Letters, Vol. 91, Issue 5 https://doi.org/10.1063/1.2759476	journal	July 2007
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors Strukov, Dmitri B.; Alibart, Fabien; Stanley Williams, R. Applied Physics A, Vol. 107, Issue 3 https://doi.org/10.1007/s00339-012-6902-x	journal	March 2012
Room-temperature diffusive phenomena in semiconductors: The case of AlGaN Warnick, Keith H.; Puzyrev, Yevgeniy; Roy, Tania Physical Review B, Vol. 84, Issue 21 https://doi.org/10.1103/PhysRevB.84.214109	journal	December 2011
Recombination-Enhanced Reactions in Semiconductors Lang, D. V. Annual Review of Materials Science, Vol. 12, Issue 1 https://doi.org/10.1146/annurev.ms.12.080182.002113	journal	August 1982
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature Ikeda, S.; Hayakawa, J.; Ashizawa, Y. Applied Physics Letters, Vol. 93, Issue 8 https://doi.org/10.1063/1.2976435	journal	August 2008
Competing Instabilities and Metastable States in $(N d, S m)_{1 / 2} {Sr}_{1 / 2} {MnO}_{3}$ Tokura, Y.; Kuwahara, H.; Moritomo, Y. Physical Review Letters, Vol. 76, Issue 17 https://doi.org/10.1103/PhysRevLett.76.3184	journal	April 1996
Low Temperature Magnetoresistance and the Magnetic Phase Diagram of ${La}_{1 - x} {Ca}_{x} {MnO}_{3}$ Schiffer, P.; Ramirez, A. P.; Bao, W. Physical Review Letters, Vol. 75, Issue 18 https://doi.org/10.1103/PhysRevLett.75.3336	journal	October 1995
Suppressed magnetization in ${La}_{0.7} {Ca}_{0.3} {MnO}_{3} ∕ {YBa}_{2} {Cu}_{3} O_{7 - δ}$ superlattices Hoffmann, A.; te Velthuis, S. G. E.; Sefrioui, Z. Physical Review B, Vol. 72, Issue 14 https://doi.org/10.1103/PhysRevB.72.140407	journal	October 2005
Low-temperature permittivity of insulating perovskite manganites Cohn, J. L.; Peterca, M.; Neumeier, J. J. Physical Review B, Vol. 70, Issue 21 https://doi.org/10.1103/PhysRevB.70.214433	journal	December 2004
Emergent Spin Filter at the Interface between Ferromagnetic and Insulating Layered Oxides Liu, Yaohua; Cuellar, F. A.; Sefrioui, Z. Physical Review Letters, Vol. 111, Issue 24 https://doi.org/10.1103/PhysRevLett.111.247203	journal	December 2013
Tunneling evidence of half-metallicity in epitaxial films of ferromagnetic perovskite manganites and ferrimagnetic magnetite Wei, J. Y. T.; Yeh, N. -C.; Vasquez, R. P. Journal of Applied Physics, Vol. 83, Issue 11 https://doi.org/10.1063/1.367799	journal	June 1998
Control of Octahedral Tilts and Magnetic Properties of Perovskite Oxide Heterostructures by Substrate Symmetry He, Jun; Borisevich, Albina; Kalinin, Sergei V. Physical Review Letters, Vol. 105, Issue 22 https://doi.org/10.1103/PhysRevLett.105.227203	journal	November 2010
Electric control of magnetism at the Fe/BaTiO3 interface Radaelli, G.; Petti, D.; Plekhanov, E. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4404	journal	March 2014
Theoretical investigation of magnetoelectric behavior in $Bi Fe O_{3}$ Ravindran, P.; Vidya, R.; Kjekshus, A. Physical Review B, Vol. 74, Issue 22 https://doi.org/10.1103/PhysRevB.74.224412	journal	December 2006
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Density-functional theory and strong interactions: Orbital ordering in Mott-Hubbard insulators Liechtenstein, A. I.; Anisimov, V. I.; Zaanen, J. Physical Review B, Vol. 52, Issue 8 https://doi.org/10.1103/PhysRevB.52.R5467	journal	August 1995
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study Dudarev, S. L.; Botton, G. A.; Savrasov, S. Y. Physical Review B, Vol. 57, Issue 3, p. 1505-1509 https://doi.org/10.1103/PhysRevB.57.1505	journal	January 1998

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Title: High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

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