Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection

doi:https://doi.org/10.1021/acs.cgd.6b01118

Title: Mercury Chalcohalide Semiconductor Hg ₃Se ₂Br ₂ for Hard Radiation Detection

Abstract

We present Hg ₃Se ₂Br ₂ that has a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm ³) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å ³. It melts congruently at a low temperature, 566°C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg ₃Se ₂Br ₂ up to 1 cm long have been grown using the Bridgman method. Hg ₃Se ₂Br ₂ single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg ₃Se ₂Br ₂ measured by the two probe method is on the order of 10 ¹¹ Ω·cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ) _e ≈ 1.4 × 10 ^–4cm ²/V and (μτ) _h ≈ 9.2 × 10 ^–5cm ²/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. Lastly, on the basismore »« less

Authors:

Li, Hao ^[1]; Meng, Fang ^[1]; Malliakas, Christos D. ^[2]; Liu, Zhifu ^[3]; Chung, Duck Young ^[1]; Wessels, Bruce ^[4]; Kanatzidis, Mercouri G. ^[2]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Department of Chemistry
Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering
Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering and Department of Electrical Engineering and Computer Science

Publication Date:: 2016-09-28

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE NA Office of Nonproliferation and Verification Research and Development (NA-22)

OSTI Identifier:: 1352593

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Crystal Growth and Design

Additional Journal Information:: Journal Volume: 16; Journal Issue: 11; Journal ID: ISSN 1528-7483

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; X-ray detector; chalcohalide; crystal growth; mobility-lifetime product; photoconductivity; γ-ray detector

Citation Formats


                    Li, Hao, Meng, Fang, Malliakas, Christos D., Liu, Zhifu, Chung, Duck Young, Wessels, Bruce, and Kanatzidis, Mercouri G. Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection.  United States: N. p., 2016. 
        Web.  doi:10.1021/acs.cgd.6b01118.

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                    Li, Hao, Meng, Fang, Malliakas, Christos D., Liu, Zhifu, Chung, Duck Young, Wessels, Bruce, & Kanatzidis, Mercouri G. Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection.  United States.  https://doi.org/10.1021/acs.cgd.6b01118

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                    Li, Hao, Meng, Fang, Malliakas, Christos D., Liu, Zhifu, Chung, Duck Young, Wessels, Bruce, and Kanatzidis, Mercouri G. Wed .  
        "Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection".  United States.  https://doi.org/10.1021/acs.cgd.6b01118.  https://www.osti.gov/servlets/purl/1352593.

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@article{osti_1352593,

  title        = {Mercury Chalcohalide Semiconductor Hg3Se2Br2 for Hard Radiation Detection},

  author       = {Li, Hao and Meng, Fang and Malliakas, Christos D. and Liu, Zhifu and Chung, Duck Young and Wessels, Bruce and Kanatzidis, Mercouri G.},

  abstractNote = {We present Hg3Se2Br2 that has a wide band gap semiconductor (2.22 eV) with high density (7.598 g/cm3) and crystallizes in the monoclinic space group C2/m with cell parameters of a = 17.496 (4) Å, b = 9.3991 (19) Å, c = 9.776(2) Å, β = 90.46(3)°, V = 1607.6(6) Å3. It melts congruently at a low temperature, 566°C, which allows for an easy single crystal growth directly from the stoichiometric melt. Single crystals of Hg3Se2Br2 up to 1 cm long have been grown using the Bridgman method. Hg3Se2Br2 single crystals exhibit a strong photocurrent response when exposed to Ag X-ray and blue diode laser. The resistivity of Hg3Se2Br2 measured by the two probe method is on the order of 1011 Ω·cm, and the mobility-lifetime product (μτ) of the electron and hole carriers estimated from the energy spectroscopy under Ag X-ray radiation are (μτ)e ≈ 1.4 × 10–4cm2/V and (μτ)h ≈ 9.2 × 10–5cm2/V. Electronic structure calculations at the density functional theory level indicate a direct band gap and a relatively small effective mass for carriers. Lastly, on the basis of the photoconductivity and hard X-ray spectrum, Hg3Se2Br2 is a promising candidate for X-ray and γ-ray radiation detection at room temperature.},

  doi          = {10.1021/acs.cgd.6b01118},

  url          = {https://www.osti.gov/biblio/1352593},
  journal      = {Crystal Growth and Design},

  issn         = {1528-7483},

  number       = 11,

  volume       = 16,

  place        = {United States},

  year         = {2016},

  month        = {9}

}

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Room temperature semiconductor detectors for nuclear security
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Title: Mercury Chalcohalide Semiconductor Hg 3Se 2Br 2 for Hard Radiation Detection

Abstract

Citation Formats

Room temperature semiconductor detectors for nuclear security journal, July 2019

Title: Mercury Chalcohalide Semiconductor Hg ₃Se ₂Br ₂ for Hard Radiation Detection

Room temperature semiconductor detectors for nuclear security
journal, July 2019