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Title: Pressure-induced metallization of the halide perovskite (CH 3NH 3)PbI 3

Abstract

We report the metallization of the hybrid perovskite semiconductor (MA)PbI 3 (MA = CH 3NH 3 +) with no apparent structural transition. We tracked its bandgap evolution during compression in diamond-anvil cells using absorption spectroscopy and observed strong absorption over both visible and IR wavelengths at pressures above ca. 56 GPa, suggesting the imminent closure of its optical bandgap. The metallic character of (MA)PbI 3 above 60 GPa was confirmed using both IR reflectivity and variable-temperature dc conductivity measurements. The impressive semiconductor properties of halide perovskites have recently been exploited in a multitude of optoelectronic applications. Meanwhile, the study of metallic properties in oxide perovskites has revealed diverse electronic phenomena. Importantly, the mild synthetic routes to halide perovskites and the templating effects of the organic cations allow for fine structural control of the inorganic lattice. Lastly, pressure-induced closure of the 1.6 eV bandgap in (MA)PbI3 demonstrates the promise of the continued study of halide perovskites under a range of thermodynamic conditions, toward realizing wholly new electronic properties.

Authors:
ORCiD logo [1];  [2];  [2]; ORCiD logo [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1352202
Grant/Contract Number:  
AC02-05CH11231; AC02-76SF00515; DMR-1351538
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 139; Journal Issue: 12; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats

Jaffe, Adam, Lin, Yu, Mao, Wendy L., and Karunadasa, Hemamala I. Pressure-induced metallization of the halide perovskite (CH3NH3)PbI3. United States: N. p., 2017. Web. doi:10.1021/jacs.7b01162.
Jaffe, Adam, Lin, Yu, Mao, Wendy L., & Karunadasa, Hemamala I. Pressure-induced metallization of the halide perovskite (CH3NH3)PbI3. United States. doi:10.1021/jacs.7b01162.
Jaffe, Adam, Lin, Yu, Mao, Wendy L., and Karunadasa, Hemamala I. Tue . "Pressure-induced metallization of the halide perovskite (CH3NH3)PbI3". United States. doi:10.1021/jacs.7b01162. https://www.osti.gov/servlets/purl/1352202.
@article{osti_1352202,
title = {Pressure-induced metallization of the halide perovskite (CH3NH3)PbI3},
author = {Jaffe, Adam and Lin, Yu and Mao, Wendy L. and Karunadasa, Hemamala I.},
abstractNote = {We report the metallization of the hybrid perovskite semiconductor (MA)PbI3 (MA = CH3NH3+) with no apparent structural transition. We tracked its bandgap evolution during compression in diamond-anvil cells using absorption spectroscopy and observed strong absorption over both visible and IR wavelengths at pressures above ca. 56 GPa, suggesting the imminent closure of its optical bandgap. The metallic character of (MA)PbI3 above 60 GPa was confirmed using both IR reflectivity and variable-temperature dc conductivity measurements. The impressive semiconductor properties of halide perovskites have recently been exploited in a multitude of optoelectronic applications. Meanwhile, the study of metallic properties in oxide perovskites has revealed diverse electronic phenomena. Importantly, the mild synthetic routes to halide perovskites and the templating effects of the organic cations allow for fine structural control of the inorganic lattice. Lastly, pressure-induced closure of the 1.6 eV bandgap in (MA)PbI3 demonstrates the promise of the continued study of halide perovskites under a range of thermodynamic conditions, toward realizing wholly new electronic properties.},
doi = {10.1021/jacs.7b01162},
journal = {Journal of the American Chemical Society},
number = 12,
volume = 139,
place = {United States},
year = {Tue Mar 14 00:00:00 EDT 2017},
month = {Tue Mar 14 00:00:00 EDT 2017}
}

Journal Article:
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Cited by: 12 works
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