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Title: Integrated Avalanche Photodiode arrays

Abstract

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Inventors:
Publication Date:
Research Org.:
LightSpin Technologies, Inc. Endicott, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1351819
Patent Number(s):
9,627,569
Application Number:
14/718,352
Assignee:
LightSpin Technologies, Inc. CHO
DOE Contract Number:
SC0009538
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 May 21
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE

Citation Formats

Harmon, Eric S. Integrated Avalanche Photodiode arrays. United States: N. p., 2017. Web.
Harmon, Eric S. Integrated Avalanche Photodiode arrays. United States.
Harmon, Eric S. Tue . "Integrated Avalanche Photodiode arrays". United States. doi:. https://www.osti.gov/servlets/purl/1351819.
@article{osti_1351819,
title = {Integrated Avalanche Photodiode arrays},
author = {Harmon, Eric S.},
abstractNote = {The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 18 00:00:00 EDT 2017},
month = {Tue Apr 18 00:00:00 EDT 2017}
}

Patent:

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  • The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
  • A radiation-sensitive semiconductor device includes a radiationdetecting avalanche diode which has a semiconductor layer structure made up of four layers of the same type conductivity. The fourth semiconductor layer is located above the third layer and has a higher doping concentration than that of the third layer. This fourth layer substantially improves the noise properties of the device, by a factor of about 2. The radiationsensitive semiconductor device is manufactured by a method in which the first and third layers of the semiconductor layer structure are provided by epitaxial growth, while the second and fourth layers of the structure aremore » provided by ion implantation. The structure and method of the invention are particularly useful in the manufacture of avalanche photodiodes with an improved noise factor.« less
  • The detection of light emitted in fast scintillating fibers and Cerenkov radiators used for fiber calorimetry and tracking applications in high energy colliders, requires fast detector arrays with high sensitivity to short wavelength photons. Photomultiplier tubes, the traditional imaging detectors for short wavelength optical radiation, have limited spatial resolution and require expensive anti-magnetic shielding. The authors report on short wavelength sensitivity improvement and detection efficiency performance for a novel p-n junction planar structure silicon avalanche photodiode (APD) array, operated in Geiger mode. The APD array provides a high sensitivity detector for applications requiring the detection of light spatial distributions withmore » single photon sensitivity.« less
  • The detection of light emitted in Cherenkov radiators requires fast detector arrays with high sensitivity to short wavelength photons. Photomultiplier tubes, the traditional imaging detectors for short wavelength optical radiation, have limited spatial resolution and require expensive anti-magnetic shielding. The authors report on the performance of a new, Geiger mode operated, silicon micro-avalanche photodiode ({micro}APD) array, designed for Cherenkov light imaging applications. They address issues of optical interfacing, speed, and pulse spectra achievable with these {micro}APDs. The new {micro}APD array provides a high sensitivity detector for applications requiring two dimensional light mapping with single photon sensitivity. These features make itmore » a promising candidate for the detection of Cherenko light in modern high energy physics experiments.« less