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Title: Theory of the spin-Seebeck effect at a topological-insulator/ferromagnetic-insulator interface

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1351680
Grant/Contract Number:
SC0012670
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 16; Related Information: CHORUS Timestamp: 2017-04-13 22:09:59; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Okuma, Nobuyuki, Masir, Massoud Ramezani, and MacDonald, Allan H. Theory of the spin-Seebeck effect at a topological-insulator/ferromagnetic-insulator interface. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.165418.
Okuma, Nobuyuki, Masir, Massoud Ramezani, & MacDonald, Allan H. Theory of the spin-Seebeck effect at a topological-insulator/ferromagnetic-insulator interface. United States. doi:10.1103/PhysRevB.95.165418.
Okuma, Nobuyuki, Masir, Massoud Ramezani, and MacDonald, Allan H. Thu . "Theory of the spin-Seebeck effect at a topological-insulator/ferromagnetic-insulator interface". United States. doi:10.1103/PhysRevB.95.165418.
@article{osti_1351680,
title = {Theory of the spin-Seebeck effect at a topological-insulator/ferromagnetic-insulator interface},
author = {Okuma, Nobuyuki and Masir, Massoud Ramezani and MacDonald, Allan H.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.165418},
journal = {Physical Review B},
number = 16,
volume = 95,
place = {United States},
year = {Thu Apr 13 00:00:00 EDT 2017},
month = {Thu Apr 13 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.165418

Citation Metrics:
Cited by: 1work
Citation information provided by
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  • In this study, we investigate the spin transport in normal metal (NM)/insulator (I)/topological insulator (TI) coupled to ferromagnetic insulator (FI) structures. In particular, we focus on the barrier thickness dependence of the spin transport inside the bulk gap of the TI with FI. The TI with FI is described by two-dimensional (2D) Dirac Hamiltonian. The energy profile of the insulator is assumed to be a square with barrier height V and thickness d along the transport-direction. This structure behaves as a tunnel device for 2D Dirac electrons. The calculation is performed for the spin conductance with changing the barrier thicknessmore » and the components of magnetization of FI layer. It is found that the spin conductance decreases with increasing the barrier thickness. Also, the spin conductance is strongly dependent on the polar angle θ, which is defined as the angle between the axis normal to the FI and the magnetization of FI layer. These results indicate that the structures are promising candidates for novel tunneling magnetoresistance devices.« less
  • One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (T{sub c}). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi{sub 2}Se{sub 3} by means of proximity to the high-T{sub c} ferrimagnetic insulator (FMI) Y{sub 3}Fe{sub 5}O{sub 12} and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) techniquemore » was used to probe the nature of the exchange coupling of the Bi{sub 2−x}Cr{sub x}Se{sub 3}/Y{sub 3}Fe{sub 5}O{sub 12} interface. We found that the Bi{sub 2−x}Cr{sub x}Se{sub 3} grown on Y{sub 3}Fe{sub 5}O{sub 12}(111) predominately contains Cr{sup 3+} cations, and the spin direction of the Cr{sup 3+} is aligned parallel to that of tetrahedral Fe{sup 3+} of the YIG, revealing a ferromagnetic exchange coupling between the Bi{sub 2−x}Cr{sub x}Se{sub 3} and the Y{sub 3}Fe{sub 5}O{sub 12}.« less
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