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Title: Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1351676
Grant/Contract Number:
AC52-06NA25396; AC04-94AL85000
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 15; Related Information: CHORUS Timestamp: 2017-04-12 22:12:33; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zarassi, A., Su, Z., Danon, J., Schwenderling, J., Hocevar, M., Nguyen, B. M., Yoo, J., Dayeh, S. A., and Frolov, S. M. Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.155416.
Zarassi, A., Su, Z., Danon, J., Schwenderling, J., Hocevar, M., Nguyen, B. M., Yoo, J., Dayeh, S. A., & Frolov, S. M. Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots. United States. doi:10.1103/PhysRevB.95.155416.
Zarassi, A., Su, Z., Danon, J., Schwenderling, J., Hocevar, M., Nguyen, B. M., Yoo, J., Dayeh, S. A., and Frolov, S. M. Wed . "Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots". United States. doi:10.1103/PhysRevB.95.155416.
@article{osti_1351676,
title = {Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots},
author = {Zarassi, A. and Su, Z. and Danon, J. and Schwenderling, J. and Hocevar, M. and Nguyen, B. M. and Yoo, J. and Dayeh, S. A. and Frolov, S. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.155416},
journal = {Physical Review B},
number = 15,
volume = 95,
place = {United States},
year = {Wed Apr 12 00:00:00 EDT 2017},
month = {Wed Apr 12 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.155416

Citation Metrics:
Cited by: 4works
Citation information provided by
Web of Science

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  • We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductormore » nanostructures for applications in quantum information technologies.« less
  • We performed measurements at helium temperatures of the electronic transport in the linear regime in an InAs quantum wire in the presence of a charged tip of an atomic force microscope (AFM) at low electron concentration. We show that at certain concentration of electrons, only two closely placed quantum dots, both in the Coulomb blockade regime, govern conductance of the whole wire. Under this condition, two types of peculiarities-wobbling and splitting-arise in the behavior of the lines of the conductance peaks of Coulomb blockade. These peculiarities are measured in quantum-wire-based structures for the first time. We explain both peculiarities asmore » an interplay of the conductance of two quantum dots present in the wire. Detailed modeling of wobbling behavior made in the framework of the orthodox theory of Coulomb blockade demonstrates good agreement with the obtained experimental data.« less
  • Tip-enhance Rayleigh scattering of Ge/Si quantum dots (QDs) has been observed with nanometer-scale spatial resolution. By using a modulated homodyne technique, real and imaginary parts of a dielectric constant of the QDs is evaluated. The dielectric constant of the QDs is larger than that of bulk Ge.
  • The energy band diagram of the multilayered Ge{sub 0.8}Si{sub 0.2}/Ge{sub 0.1}Si{sub 0.9} heterostructures with vertically correlated quantum dots is analyzed theoretically. With regard to fluctuations of the thickness layer in the columns of quantum dots and to the exciton-phonon coupling, it is shown that the electron states constitute a miniband. The hole wave functions remain localized in the quantum dots. The spectrum of optical transitions calculated for a 20-layered structure at room temperature is in good agreement with the experimental photoluminescence spectrum that involves an intense band at about 1.6 {mu}m. From theoretical considerations and experimental measurements, specific evidence formore » the miniband in the superlattice is deduced; it is found that the overlap integrals of the wave functions of electrons and holes and the integrated intensity of the photoluminescence band of the Ge quantum dots are described by quadratic functions of the number of the structure periods.« less