Photocharge transport and recombination measurements in amorphous silicon films and solar cells by photoconductive frequency mixing. Annual subcontract report, May 13, 1994--May 12, 1995
- Univ. of California, Los Angeles, CA (United States)
The continuous decay of electron drift mobility in intrinsic a-Si:H and a-SiC:H upon light soaking was investigated by the photomixing technique. The photoconductivity, lifetime and drift mobility in intrinsic hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) while light-soaking were determined using a photomixing technique. In addition to the decay of the photoconductivity and electron lifetime, continuous decay of the electron drift mobility was found during the light soaking process, which reveals a new phenomenon associated with the Staebler-Wronski effect. The drift mobility decreased by a factor of 2 for 20 hour light soaking at 2.5 sun intensity. Experimental data were fitted to a stretched exponential law. Different stretched-exponential parameters for photoconductivity, lifetime and drift mobility were obtained, which indicates the production of defects with different generation kinetics upon light soaking.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 135153
- Report Number(s):
- NREL/TP-451-20019; ON: DE95013131; TRN: 95:008673
- Resource Relation:
- Other Information: PBD: Oct 1995
- Country of Publication:
- United States
- Language:
- English
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