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Title: Giant field enhancement in longitudinal epsilon-near-zero films

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1351041
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 16; Related Information: CHORUS Timestamp: 2017-04-10 22:23:03; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kamandi, Mohammad, Guclu, Caner, Luk, Ting Shan, Wang, George T., and Capolino, Filippo. Giant field enhancement in longitudinal epsilon-near-zero films. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.161105.
Kamandi, Mohammad, Guclu, Caner, Luk, Ting Shan, Wang, George T., & Capolino, Filippo. Giant field enhancement in longitudinal epsilon-near-zero films. United States. doi:10.1103/PhysRevB.95.161105.
Kamandi, Mohammad, Guclu, Caner, Luk, Ting Shan, Wang, George T., and Capolino, Filippo. Mon . "Giant field enhancement in longitudinal epsilon-near-zero films". United States. doi:10.1103/PhysRevB.95.161105.
@article{osti_1351041,
title = {Giant field enhancement in longitudinal epsilon-near-zero films},
author = {Kamandi, Mohammad and Guclu, Caner and Luk, Ting Shan and Wang, George T. and Capolino, Filippo},
abstractNote = {},
doi = {10.1103/PhysRevB.95.161105},
journal = {Physical Review B},
number = 16,
volume = 95,
place = {United States},
year = {Mon Apr 10 00:00:00 EDT 2017},
month = {Mon Apr 10 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.161105

Citation Metrics:
Cited by: 4works
Citation information provided by
Web of Science

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  • The Fano-type interference effect is studied in the heterostructure composed of an epsilon-near-zero (ENZ) material and a truncated photonic crystal for transverse magnetic polarized light. In the Fano-type interference effect, the ENZ material provides narrow reflection pathway and the photonic crystal provides broadband reflection pathway. The boundary condition across the ENZ interface and the confinement effect provided by the photonic crystal can enhance the electric fields in the ENZ material greatly. The field enhancements, together with the asymmetric property of Fano-type spectrum, possess potential applications for significantly lowering the threshold of nonlinear processes such as optical switching and bistability.
  • Abstract not provided.
  • Abstract not provided.
  • We utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ{sub 0} ∼ 6×10{sup −3}, where d is the film thickness and  λ{sub 0} is the free space wavelength). We show thatmore » this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.« less
  • We experimentally demonstrate efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm. A conversion efficiency of 3.3 × 10{sup −6} is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.