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Title: Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe

Authors:
 [1]; ORCiD logo [2];  [1];  [3];  [3]; ORCiD logo [1];  [4];  [2]
  1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
  3. School of Materials Science and Engineering, Beihang University, Beijing 100191, China
  4. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1351028
Grant/Contract Number:
SC0001299; SC0014520
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 5; Related Information: CHORUS Timestamp: 2018-02-14 18:58:06; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Wei, Tian-Ran, Tan, Gangjian, Wu, Chao-Feng, Chang, Cheng, Zhao, Li-Dong, Li, Jing-Feng, Snyder, G. Jeffrey, and Kanatzidis, Mercouri G. Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe. United States: N. p., 2017. Web. doi:10.1063/1.4975603.
Wei, Tian-Ran, Tan, Gangjian, Wu, Chao-Feng, Chang, Cheng, Zhao, Li-Dong, Li, Jing-Feng, Snyder, G. Jeffrey, & Kanatzidis, Mercouri G. Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe. United States. doi:10.1063/1.4975603.
Wei, Tian-Ran, Tan, Gangjian, Wu, Chao-Feng, Chang, Cheng, Zhao, Li-Dong, Li, Jing-Feng, Snyder, G. Jeffrey, and Kanatzidis, Mercouri G. Mon . "Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe". United States. doi:10.1063/1.4975603.
@article{osti_1351028,
title = {Thermoelectric transport properties of polycrystalline SnSe alloyed with PbSe},
author = {Wei, Tian-Ran and Tan, Gangjian and Wu, Chao-Feng and Chang, Cheng and Zhao, Li-Dong and Li, Jing-Feng and Snyder, G. Jeffrey and Kanatzidis, Mercouri G.},
abstractNote = {},
doi = {10.1063/1.4975603},
journal = {Applied Physics Letters},
number = 5,
volume = 110,
place = {United States},
year = {Mon Jan 30 00:00:00 EST 2017},
month = {Mon Jan 30 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4975603

Citation Metrics:
Cited by: 4works
Citation information provided by
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  • Iodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 10 17 cm -3 (p-type) to 5.0 × 10 15 cm -3 (n-type) then to 2.0 × 10 17 cm -3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bondsmore » like those in p-type SnSe. By alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.« less
  • Iodine-doped n-type SnSe polycrystalline by melting and hot pressing is prepared. The prepared material is anisotropic with a peak ZT of ≈0.8 at about 773 K measured along the hot pressing direction. This is the first report on thermoelectric properties of n-type Sn chalcogenide alloys. With increasing content of iodine, the carrier concentration changed from 2.3 × 1017 cm-3 (p-type) to 5.0 × 1015 cm-3 (n-type) then to 2.0 × 1017 cm-3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. Bymore » alloying with 10 at% SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ≈1.0 at about 773 K measured also along the hot pressing direction.« less
  • A hydrothermal approach was employed to efficiently synthesize SnSe nanorods. The nanorods were consolidated into polycrystalline SnSe by spark plasma sintering for low temperature electrical and thermal properties characterization. The low temperature transport properties indicate semiconducting behavior with a typical dielectric temperature dependence of the thermal conductivity. The transport properties are discussed in light of the recent interest in this material for thermoelectric applications. The nanorod growth mechanism is also discussed in detail. - Graphical abstract: SnSe nanorods were synthesized by a simple hydrothermal method through a bottom-up approach. Micron sized flower-like crystals changed to nanorods with increasing hydrothermal temperature.more » Low temperature transport properties of polycrystalline SnSe, after SPS densification, were reported for the first time. This bottom-up synthetic approach can be used to produce phase-pure dense polycrystalline materials for thermoelectrics applications. - Highlights: • SnSe nanorods were synthesized by a simple and efficient hydrothermal approach. • The role of temperature, time and NaOH content was investigated. • SPS densification allowed for low temperature transport properties measurements. • Transport measurements indicate semiconducting behavior.« less