Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics

Bergeron, Hadallia; Sangwan, Vinod K.; McMorrow, Julian J.; Campbell, Gavin P.; Balla, Itamar; Liu, Xiaolong; Bedzyk, Michael J.; Marks, Tobin J.; Hersam, Mark C.

doi:10.1063/1.4975064

Title: Chemical vapor deposition of monolayer MoS₂ directly on ultrathin Al₂O₃ for low-power electronics

Journal Article · Mon Jan 30 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4975064· OSTI ID:1465963

Bergeron, Hadallia ^[1];

^[1]; McMorrow, Julian J. ^[1]; Campbell, Gavin P. ^[1];

^[1];

^[2]; Bedzyk, Michael J. ^[3]; Marks, Tobin J. ^[4];

^[5]

Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Northwestern Univ., Evanston, IL (United States). Applied Physics Graduate Program
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Applied Physics Graduate Program. Dept. of Physics and Astronomy
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Dept. of Chemistry
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Applied Physics Graduate Program. Dept. of Chemistry. Dept. of Electrical Engineering and Computer Science

Monolayer MoS₂ has recently been identified as a promising material for high-performance electronics. However, monolayer MoS₂ must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this paper, we report the chemical vapor deposition (CVD) of monolayer MoS₂ directly on 20 nm thick Al₂O₃ grown by atomic layer deposition (ALD). The quality of the resulting MoS₂ is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al₂O₃ ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS₂ (800 °C). Field-effect transistors (FETs) derived from these MoS₂/Al₂O₃ stacks show minimal hysteresis with a sub-threshold swing as low as ~220 mV/decade, threshold voltages of ~2 V, and current I_ON/I_OFF ratio as high as ~10⁴, where I_OFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. Finally, the system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS₂ with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.

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Research Organization:: Northwestern Univ., Evanston, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Argonne-Northwestern Solar Energy Research Center (ANSER)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Inst. of Standards and Technology (NIST) (United States); National Science Foundation (NSF); National Aeronautics and Space Administration (NASA); Office of Naval Research (ONR) (United States)

Grant/Contract Number:: SC0001059; 70NANB14H012; EFRI-1433510; DMR-1121262; NNCI-1542205; NNX12AM44H; N00014-14-1-0669

OSTI ID:: 1465963

Alternate ID(s):: OSTI ID: 1351027

Journal Information:: Applied Physics Letters, Vol. 110, Issue 5; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 63 works

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Title: Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics

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Title: Chemical vapor deposition of monolayer MoS₂ directly on ultrathin Al₂O₃ for low-power electronics