Unusual exciton–phonon interactions at van der Waals engineered interfaces

Chow, Colin M.; Yu, Hongyi; Jones, Aaron M.; Yan, Jiaqiang; Mandrus, David G.; Taniguchi, Takashi; Watanabe, Kenji; Yao, Wang; Xu, Xiaodong

doi:10.1021/acs.nanolett.6b04944

Title: Unusual exciton–phonon interactions at van der Waals engineered interfaces

Journal Article · Fri Jan 13 00:00:00 EST 2017 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b04944· OSTI ID:1350949

Chow, Colin M. ^[1]; Yu, Hongyi ^[2]; Jones, Aaron M. ^[1]; Yan, Jiaqiang ^[3]; Mandrus, David G. ^[3]; Taniguchi, Takashi ^[4]; Watanabe, Kenji ^[4]; Yao, Wang ^[2]; Xu, Xiaodong ^[1]

Univ. of Washington, Seattle, WA (United States)
Univ. of Hong Kong, Hong Kong (China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
National Institute for Materials Science, Ibaraki (Japan)

Raman scattering is a ubiquitous phenomenon in light–matter interactions, which reveals a material’s electronic, structural, and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe₂ monolayer with materials such as SiO₂, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons that are either traditionally inactive or weak. This Raman scattering can be amplified by nearly 2 orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe₂ directly or via an A₁' optical phonon from WSe₂. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe₂ sample geometries. Finally, this cross-platform electron–phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1350949

Journal Information:: Nano Letters, Vol. 17, Issue 2; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 68 works

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New insights in the lattice dynamics of monolayers, bilayers, and trilayers of WSe2 and unambiguous determination of few-layer-flakes' thickness De Luca, Marta; Cartoixà, Xavier; Martín-Sánchez, Javier arXiv https://doi.org/10.48550/arxiv.1910.12503	text	January 2019
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Title: Unusual exciton–phonon interactions at van der Waals engineered interfaces

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