Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

Ross, Jason S.; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

doi:10.1021/acs.nanolett.6b03398

Title: Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

Journal Article · Thu Dec 22 00:00:00 EST 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b03398· OSTI ID:1350948

Ross, Jason S. ^[1]; Rivera, Pasqual ^[1]; Schaibley, John ^[1]; Lee-Wong, Eric ^[1]; Yu, Hongyi ^[2]; Taniguchi, Takashi ^[3]; Watanabe, Kenji ^[3]; Yan, Jiaqiang ^[4]; Mandrus, David ^[4]; Cobden, David ^[1]; Yao, Wang ^[2]; Xu, Xiaodong ^[1]

Univ. of Washington, Seattle, WA (United States)
Univ. of Hong Kong, Hong Kong (China)
National Institute for Materials Science, Ibaraki (Japan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe₂–WSe₂ heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1350948

Journal Information:: Nano Letters, Vol. 17, Issue 2; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 229 works

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Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics Ubrig, Nicolas; Ponomarev, Evgeniy; Zultak, Johanna arXiv https://doi.org/10.48550/arxiv.1912.10345	text	January 2019
Publisher Correction: Interlayer excitons in a bulk van der Waals semiconductor Arora, Ashish; Drüppel, Matthias; Schmidt, Robert Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-01621-1	journal	November 2017

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