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Title: Scanning Quantum Cryogenic Atom Microscope

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Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 7; Journal Issue: 3; Related Information: CHORUS Timestamp: 2017-04-06 11:21:54; Journal ID: ISSN 2331-7019
American Physical Society
Country of Publication:
United States

Citation Formats

Yang, Fan, Kollár, Alicia J., Taylor, Stephen F., Turner, Richard W., and Lev, Benjamin L. Scanning Quantum Cryogenic Atom Microscope. United States: N. p., 2017. Web. doi:10.1103/PhysRevApplied.7.034026.
Yang, Fan, Kollár, Alicia J., Taylor, Stephen F., Turner, Richard W., & Lev, Benjamin L. Scanning Quantum Cryogenic Atom Microscope. United States. doi:10.1103/PhysRevApplied.7.034026.
Yang, Fan, Kollár, Alicia J., Taylor, Stephen F., Turner, Richard W., and Lev, Benjamin L. Mon . "Scanning Quantum Cryogenic Atom Microscope". United States. doi:10.1103/PhysRevApplied.7.034026.
title = {Scanning Quantum Cryogenic Atom Microscope},
author = {Yang, Fan and Kollár, Alicia J. and Taylor, Stephen F. and Turner, Richard W. and Lev, Benjamin L.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.7.034026},
journal = {Physical Review Applied},
number = 3,
volume = 7,
place = {United States},
year = {Mon Mar 27 00:00:00 EDT 2017},
month = {Mon Mar 27 00:00:00 EDT 2017}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevApplied.7.034026

Citation Metrics:
Cited by: 6works
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  • We describe a novel variable (cryogenic) temperature near-field scanning optical microscope (VT-NSOM) designed specifically for submicron imaging of materials and devices over a temperature range of 12{endash}300 K. In high vacuum, we cool only the sample stage of the compact NSOM, thereby maintaining a large scan area (35&hthinsp;{mu}m{times}35&hthinsp;{mu}m) at low temperatures and enabling rapid ({approximately}30&hthinsp;min) temperature changes. With incorporation into an external conventional optical microscope, the VT-NSOM is capable of imaging a single submicron feature over the entire temperature range. We demonstrate the performance of the instrument by examining the photoresponse of threading dislocation defects in relaxed GeSi films. {copyright}more » {ital 1999 American Institute of Physics.}« less
  • The authors describe a simple, versatile cryogenic ({approximately}4.2 K) scanning tunneling microscope (CSTM) system optimized for spectroscopic studies. The authors find that spectroscopic data obtained at low temperatures are a function of the local surface characteristics of both the tip probe and sample. The superconducting density of states of lead is masked for tips with a heavy surface oxide (etched tungsten, stainless steel), yet easily observed with nonoxidized tips (gold, platinum). The authors show direct evidence that small metallic inclusions embedded in some oxides can produce single electron capacitive charging effects that dominate current-voltage characteristics.
  • We describe a compact scanning tunneling microscope using piezoelectric bimorph elements to achieve a large scanning area of 20 2/ at 4.2 K. This instrument provides inherent temperature compensation, compatibility with a high magnetic field environment, and a novel means of rough sample--tip (z) adjustment.
  • We have measured reproducible tunneling spectra on YBa{sub 2}Cu{sub 3}O{sub 7} ({ital T}{sub {ital c}}{similar to}85 K) thin films (thickness {similar to}2 {mu}m) with a cryogenic scanning tunneling microscope. We find that the {ital I}-{ital V} curves are generally of three types. The most common type, featured in a large majority of the data, shows a region of high conductance at zero bias. The amplitude of this region is inversely proportional to the tunneling resistance between the tip and sample. It is possible that this can be explained in terms of Josephson effects within the films, although an alternative ismore » given based on electronic self-energy corrections. Data showing capacitive charging steps are analyzed in terms of two ultrasmall tunnel junctions in series.. Theoretical fits to the data give specific values of the junction parameters that are consistent with the assumed geometry of the tip probing an individual grain of the film. The third type of {ital I}-{ital V} curves exhibits negative differential resistance. We conclude that this phenomenon is probably due to tunneling to localized states in the surface oxide. We also present and discuss data with energy-gap-like behavior; the best example gives {Delta} to be about 27 mV.« less
  • We describe the development and the capabilities of an advanced system for nanoscale electrical transport studies. This system consists of a low temperature four-probe scanning tunneling microscope (STM) and a high-resolution scanning electron microscope coupled to a molecular-beam epitaxy sample preparation chamber. The four STM probes can be manipulated independently with subnanometer precision, enabling atomic resolution STM imaging and four-point electrical transport study of surface electronic systems and nanostructured materials at temperatures down to 10 K. Additionally, an integrated energy analyzer allows for scanning Auger microscopy to probe chemical species of nanostructures. Some testing results are presented.