MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

doi:https://doi.org/10.1038/srep34169

Title: MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

Abstract

Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.

Authors:

Hong, Wen-Chiang ^[1]; Ku, Chieh-Jen ^[1]; Li, Rui ^[1]; Abbaslou, Siamak ^[1]; Reyes, Pavel ^[1]; Wang, Szu-Ying ^[1]; Li, Guangyuan ^[1]; Lu, Ming ^[2]; Sheng, Kuang ^[1]; Lu, Yicheng ^[1]

Rutgers Univ., Piscataway, NJ (United States). Dept. of Electrical and Computer Engineering
Zhejiang Univ., Hangzhou (China). College of Electrical Engineering

Publication Date:: 2016-10-10

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1349569

Report Number(s):: BNL-113698-2017-JA
Journal ID: ISSN 2045-2322; KC0403020

Grant/Contract Number:: SC00112704

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; electrical and electronic engineering; electronic devices

Citation Formats


                    Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, and Lu, Yicheng. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics.  United States: N. p., 2016. 
        Web.  doi:10.1038/srep34169.

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                    Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, & Lu, Yicheng. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics.  United States.  https://doi.org/10.1038/srep34169

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                    Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, and Lu, Yicheng. Mon .  
        "MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics".  United States.  https://doi.org/10.1038/srep34169.  https://www.osti.gov/servlets/purl/1349569.

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@article{osti_1349569,

  title        = {MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics},

  author       = {Hong, Wen-Chiang and Ku, Chieh-Jen and Li, Rui and Abbaslou, Siamak and Reyes, Pavel and Wang, Szu-Ying and Li, Guangyuan and Lu, Ming and Sheng, Kuang and Lu, Yicheng},

  abstractNote = {Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.},

  doi          = {10.1038/srep34169},

  url          = {https://www.osti.gov/biblio/1349569},
  journal      = {Scientific Reports},

  issn         = {2045-2322},

  number       = 1,

  volume       = 6,

  place        = {United States},

  year         = {2016},

  month        = {10}

}

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Title: MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

Abstract

Citation Formats

Fabrication innovations journal, May 2008

Micro-inverters — Promising solutions in solar photovoltaics journal, December 2012

Building integrated photovoltaic products: A state-of-the-art review and future research opportunities journal, May 2012

Polymer power journal, August 2009

Toward integrated PV panels and power electronics using printing technologies journal, July 2010

High-voltage silicon thin film transistor on quartz journal, June 1982

High voltage polycrystalline thin-film transistor with variable doping slots in the offset region journal, March 2002

Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon conference, December 2009

High-voltage amorphous silicon thin-film transistors journal, March 1993

High voltage thin film transistors integrated with MEMS journal, August 2006

Novel Low-Temperature Polycrystalline-Silicon Power Devices with Very-Low On-Resistance Using Excimer Laser-Crystallization journal, January 2004

High Voltage, Moderate Current Thin Film Transistor for Actuator Applications journal, September 2007

High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces journal, December 2015

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors journal, November 2004

High operating voltage application of transparent a-InGaZnO thin-film transistors journal, January 2013

High-voltage field effect transistors with wide-bandgap β -Ga 2 O 3 nanomembranes journal, May 2014

Fundamentals of zinc oxide as a semiconductor journal, October 2009

Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1−xO heterojunction solar cells journal, January 2012

Nanowire dye-sensitized solar cells journal, May 2005

Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors journal, March 2011

Improvement of Negative Bias Stress Stability in Mg0.03Zn0.97O Thin-Film Transistors journal, September 2015

Photovoltaic electrochromic device for solar cell module and self-powered smart glass applications journal, April 2012

Design Optimization of Thin-Film Transistors Based on a Metal–Substrate–Semiconductor Architecture for High DC Voltage Sensing journal, April 2016

Amorphous Silicon Thin Film Transistor Array Technology: Applications in Printing and Document Scanning journal, January 1987

Digital radiology using active matrix readout of amorphous selenium: Radiation hardness of cadmium selenide thin film transistors journal, April 1998

Radiation hardness of single-crystalline zinc oxide films journal, May 2012

Nonsaturating Drain Current Characteristic in Short-Channel Amorphous-Silicon Thin-Film Transistors journal, April 2010

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing journal, November 2008

Dielectric constants of BeO, MgO, and CaO using the two-terminal method journal, November 1989

Epitaxial MgO as an alternative gate dielectric for SiC transistor applications journal, June 2008

Self-aligned photolithography for the fabrication of fully transparent high-voltage devices journal, April 2018

Yttrium zinc tin oxide high voltage thin film transistors journal, September 2018

Fabrication innovations
journal, May 2008

Micro-inverters — Promising solutions in solar photovoltaics
journal, December 2012

Building integrated photovoltaic products: A state-of-the-art review and future research opportunities
journal, May 2012

Polymer power
journal, August 2009

Toward integrated PV panels and power electronics using printing technologies
journal, July 2010

High-voltage silicon thin film transistor on quartz
journal, June 1982

High voltage polycrystalline thin-film transistor with variable doping slots in the offset region
journal, March 2002

Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon
conference, December 2009

High-voltage amorphous silicon thin-film transistors
journal, March 1993

High voltage thin film transistors integrated with MEMS
journal, August 2006

Novel Low-Temperature Polycrystalline-Silicon Power Devices with Very-Low On-Resistance Using Excimer Laser-Crystallization
journal, January 2004

High Voltage, Moderate Current Thin Film Transistor for Actuator Applications
journal, September 2007

High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces
journal, December 2015

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004

High operating voltage application of transparent a-InGaZnO thin-film transistors
journal, January 2013

High-voltage field effect transistors with wide-bandgap β -Ga ₂ O ₃ nanomembranes
journal, May 2014

Fundamentals of zinc oxide as a semiconductor
journal, October 2009

Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1−xO heterojunction solar cells
journal, January 2012

Nanowire dye-sensitized solar cells
journal, May 2005

Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors
journal, March 2011

Improvement of Negative Bias Stress Stability in Mg_0.03Zn_0.97O Thin-Film Transistors
journal, September 2015

Photovoltaic electrochromic device for solar cell module and self-powered smart glass applications
journal, April 2012

Design Optimization of Thin-Film Transistors Based on a Metal–Substrate–Semiconductor Architecture for High DC Voltage Sensing
journal, April 2016

Amorphous Silicon Thin Film Transistor Array Technology: Applications in Printing and Document Scanning
journal, January 1987

Digital radiology using active matrix readout of amorphous selenium: Radiation hardness of cadmium selenide thin film transistors
journal, April 1998

Radiation hardness of single-crystalline zinc oxide films
journal, May 2012

Nonsaturating Drain Current Characteristic in Short-Channel Amorphous-Silicon Thin-Film Transistors
journal, April 2010

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
journal, November 2008

Dielectric constants of BeO, MgO, and CaO using the two-terminal method
journal, November 1989

Epitaxial MgO as an alternative gate dielectric for SiC transistor applications
journal, June 2008

Self-aligned photolithography for the fabrication of fully transparent high-voltage devices
journal, April 2018

Yttrium zinc tin oxide high voltage thin film transistors
journal, September 2018