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Title: Ga and In adsorption on Si(112): Adsorption sites and superstructure

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1349542
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 12; Related Information: CHORUS Timestamp: 2017-03-31 22:11:26; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., and Falta, J.. Ga and In adsorption on Si(112): Adsorption sites and superstructure. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.125441.
Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., & Falta, J.. Ga and In adsorption on Si(112): Adsorption sites and superstructure. United States. doi:10.1103/PhysRevB.95.125441.
Speckmann, M., Schmidt, Th., Flege, J. I., Höcker, J., and Falta, J.. Fri . "Ga and In adsorption on Si(112): Adsorption sites and superstructure". United States. doi:10.1103/PhysRevB.95.125441.
@article{osti_1349542,
title = {Ga and In adsorption on Si(112): Adsorption sites and superstructure},
author = {Speckmann, M. and Schmidt, Th. and Flege, J. I. and Höcker, J. and Falta, J.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.125441},
journal = {Physical Review B},
number = 12,
volume = 95,
place = {United States},
year = {Fri Mar 31 00:00:00 EDT 2017},
month = {Fri Mar 31 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.125441

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