skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structure and magnetism of Fe-doped BaSnO3 thin films

Abstract

BaSnO3 is an excellent candidate system for developing a new class of perovskite-based dilute magnetic semiconductors. Here in this study, we show that BaSn0.95Fe0.05O3 can be grown from a background pressure of ~2×10-3 mTorr to oxygen pressures of 300 mTorr with high crystallinity and excellent structural quality. When grown in vacuum, the films may be weakly ferromagnetic with a nonzero x-ray magnetic circular dichroism signal on the Fe L3 edge. Growth with oxygen flow appears to suppress magnetic ordering. Even for very thick films grown in 100 mTorr O2, the films are paramagnetic. Finally, the existence of ferromagnetism in vacuum-grown BaSnO3 may be attributed to the F-center exchange mechanism, which relies on the presence of oxygen vacancies to facilitate the ferromagnetism. However, other possible extrinsic contributions to the magnetic ordering, such as clusters of Fe3O4 and FeO or contamination can also explain the observed behavior.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [2];  [2];  [3]
  1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
  2. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  3. Department of Applied Physics, Stanford University, Stanford, California 94305, USA
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)
OSTI Identifier:
1349373
Alternate Identifier(s):
OSTI ID: 1408430; OSTI ID: 1421278
Grant/Contract Number:  
AC02-05CH11231; W911NF-14-1-0611
Resource Type:
Journal Article: Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 7 Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Alaan, Urusa S., N’Diaye, Alpha T., Shafer, Padraic, Arenholz, Elke, and Suzuki, Yuri. Structure and magnetism of Fe-doped BaSnO3 thin films. United States: N. p., 2017. Web. doi:10.1063/1.4977772.
Alaan, Urusa S., N’Diaye, Alpha T., Shafer, Padraic, Arenholz, Elke, & Suzuki, Yuri. Structure and magnetism of Fe-doped BaSnO3 thin films. United States. https://doi.org/10.1063/1.4977772
Alaan, Urusa S., N’Diaye, Alpha T., Shafer, Padraic, Arenholz, Elke, and Suzuki, Yuri. 2017. "Structure and magnetism of Fe-doped BaSnO3 thin films". United States. https://doi.org/10.1063/1.4977772.
@article{osti_1349373,
title = {Structure and magnetism of Fe-doped BaSnO3 thin films},
author = {Alaan, Urusa S. and N’Diaye, Alpha T. and Shafer, Padraic and Arenholz, Elke and Suzuki, Yuri},
abstractNote = {BaSnO3 is an excellent candidate system for developing a new class of perovskite-based dilute magnetic semiconductors. Here in this study, we show that BaSn0.95Fe0.05O3 can be grown from a background pressure of ~2×10-3 mTorr to oxygen pressures of 300 mTorr with high crystallinity and excellent structural quality. When grown in vacuum, the films may be weakly ferromagnetic with a nonzero x-ray magnetic circular dichroism signal on the Fe L3 edge. Growth with oxygen flow appears to suppress magnetic ordering. Even for very thick films grown in 100 mTorr O2, the films are paramagnetic. Finally, the existence of ferromagnetism in vacuum-grown BaSnO3 may be attributed to the F-center exchange mechanism, which relies on the presence of oxygen vacancies to facilitate the ferromagnetism. However, other possible extrinsic contributions to the magnetic ordering, such as clusters of Fe3O4 and FeO or contamination can also explain the observed behavior.},
doi = {10.1063/1.4977772},
url = {https://www.osti.gov/biblio/1349373}, journal = {AIP Advances},
issn = {2158-3226},
number = 5,
volume = 7,
place = {United States},
year = {Tue Feb 28 00:00:00 EST 2017},
month = {Tue Feb 28 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1063/1.4977772

Citation Metrics:
Cited by: 10 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Spintronics: The Future of Data Storage?
journal, May 2006


Materials design for semiconductor spintronics by ab initio electronic-structure calculation
journal, April 2003


Oxide Dilute Magnetic Semiconductors—Fact or Fiction?
journal, November 2008


Magnetic coupling and electric conduction in oxide diluted magnetic semiconductors
journal, June 2008


Cluster ferromagnetism in Mn-doped InSb
journal, October 2008


Ferromagnetism in Fe-doped SnO2 thin films
journal, February 2004


Dedication
journal, March 2006


Magnetic and optical properties of Mn-doped BaSnO3
journal, June 2009


Room temperature ferromagnetism in Fe-doped BaSnO3
journal, March 2009


ChemInform Abstract: Room Temperature Ferromagnetism in Fe-Doped BaSnO 3 .
journal, June 2009


Gd-doped BaSnO3: A transparent conducting oxide with localized magnetic moments
journal, January 2016


Probing the Electronic Structures of Ternary Perovskite and Pyrochlore Oxides Containing Sn 4+ or Sb 5+
journal, March 2004


La-doped BaSnO 3 —Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy
journal, July 2013


Structural, optical and magnetic properties of Fe-doped barium stannate thin films grown by PLD
journal, October 2013


Some mixed metal oxides of perovskite structure
journal, August 1960


Band gap tuning of lead-substituted BaSnO3 for visible light photocatalysis
journal, January 2007


Works referencing / citing this record:

Oxygen vacancy mediated conductivity and charge transport properties of epitaxial Ba 0.6 La 0.4 TiO 3− δ thin films
journal, May 2019


Epitaxial Co doped BaSnO3 thin films with tunable optical bandgap on MgO substrate
journal, February 2019