Current-induced surface roughness reduction in conducting thin films
- Univ. of Massachusetts, Amherst, MA (United States)
Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film’s wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. In conclusion, the modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.
- Research Organization:
- Univ. of Massachusetts, Amherst, MA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- FG02-07ER46407
- OSTI ID:
- 1466009
- Alternate ID(s):
- OSTI ID: 1349360
- Journal Information:
- Applied Physics Letters, Vol. 110, Issue 10; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films
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journal | September 2018 |
Design of semiconductor surface pits for fabrication of regular arrays of quantum dots and nanorings
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journal | January 2019 |
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