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Title: Current-induced surface roughness reduction in conducting thin films

Authors:
ORCiD logo [1];  [1]
  1. Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts 01003-9303, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1349360
Grant/Contract Number:
FG02-07ER46407
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 10; Related Information: CHORUS Timestamp: 2018-02-14 11:24:41; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Du, Lin, and Maroudas, Dimitrios. Current-induced surface roughness reduction in conducting thin films. United States: N. p., 2017. Web. doi:10.1063/1.4977024.
Du, Lin, & Maroudas, Dimitrios. Current-induced surface roughness reduction in conducting thin films. United States. doi:10.1063/1.4977024.
Du, Lin, and Maroudas, Dimitrios. Mon . "Current-induced surface roughness reduction in conducting thin films". United States. doi:10.1063/1.4977024.
@article{osti_1349360,
title = {Current-induced surface roughness reduction in conducting thin films},
author = {Du, Lin and Maroudas, Dimitrios},
abstractNote = {},
doi = {10.1063/1.4977024},
journal = {Applied Physics Letters},
number = 10,
volume = 110,
place = {United States},
year = {Mon Mar 06 00:00:00 EST 2017},
month = {Mon Mar 06 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4977024

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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  • We investigate the influence of roughness at a nanometer scale on the thermal properties of thin films. It is shown that the roughness causes an increase of the thermal capacitance. For mound rough surfaces the increase of the thermal capacitance depends strongly on the relative magnitude of the average mound separation {lambda} and the system correlation length {zeta}. Indeed, a rather complex behavior develops for {zeta}{gt}{lambda}, while for {zeta}{lt}{lambda} a smooth decrease of the capacitance as a function of the average mound separation {lambda} takes place. Finally, the roughness strongly affects the thermal capacitance as a function of the filmmore » thickness as long as {zeta}{lt}{lambda}, while a precise determination of the actual effect requires a more-detailed knowledge of the thickness dependence of the involved roughness parameters during film growth. {copyright} 2001 American Institute of Physics.« less
  • In this work, we report on the impact of distinct growth parameters that affect the roughness and surface morphology of La{sub 2/3}Ca{sub 1/3}MnO{sub 3} epitaxial thin films grown by rf sputtering, namely, the film thickness and the deposition temperature. Data for films with thicknesses ranging from 2.4 to 108 nm will be presented. A correlation with transport measurements is also reported: whereas films thicker than 6 nm show the typical metal-to-insulator transition, the thinner film is insulating. The resistivity is strongly enhanced when decreasing film thickness. Nuclear magnetic resonance measurements have been used to monitor the relative concentration of themore » localized Mn{sup 4+} and delocalized Mn{sup 3+/4+} states. It is found that the relative intensity of the delocalized Mn{sup 3+/4+} configuration (I{sup 3+/4+}) progressively lowers when reducing film thickness. Of significance could be the observation that I{sup 3+/4+} remains finite for the thicknesses corresponding to insulating films, thus suggesting that an electrically inhomogeneous state is formed in a region close to the interface with the substrate. {copyright} 2001 American Institute of Physics.« less
  • Amorphous Ta{sub 2}O{sub 5} thin films were deposited by radio-frequency magnetron sputtering at the substrate temperatures of 100, 200, and 300 C, respectively. The electrical properties of Ta{sub 2}O{sub 5} thin films were investigated as a function of substrate temperature and film thickness. The leakage current of the Ta{sub 2}O{sub 5} films was in the order of 10{sup {minus}5} to 10{sup {minus}6} A/cm{sup 2} for an applied field of 1 MV/cm. The charge storage capacitances ({epsilon}E{sub breakdown}) were 7.7 (100 C), 7.9 (200 C), and 3.7 (300 C) {micro}C/cm{sup 2}. Most of the electrical analyses were performed with the datamore » obtained for the Ta{sub 2}O{sub 5} thin films deposited at 200 C substrate temperature because they showed optimum electrical properties. The dominant conduction mechanism changed from Schottky emission current at low field to Poole-Frankel current at the high field. With increasing film thickness, the surface roughness increased, whereas the transition fields from the electrode-limited current to the bulk-limited current process decreased. To verify the effect of this surface roughness on the electrical conduction mechanism, a two-dimensional numerical simulator, MEDICI, was used to simulate the electric field distribution at the bulk region of the thin film and the interface region between the thin film and electrode.« less
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