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Title: Distinct electronic structure for the extreme magnetoresistance in YSb

Abstract

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Moreover, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

Authors:
 [1];  [1];  [2];  [1];  [1];  [3];  [1];  [1];  [1];  [4];  [5];  [6];  [6];  [1];  [1];  [7];  [2];  [1]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences (SIMES); Stanford Univ., CA (United States). Dept. of Physics. Dept. of Applied Physics. Geballe Lab. for Advanced Materials
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source; ShanghaiTech Univ. (China). School of Physical Science and Technology; Pohang Univ. of Science and Technology (Korea, Republic of). Pohang Accelerator Lab.
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
  5. Pohang Univ. of Science and Technology (Korea, Republic of). Pohang Accelerator Lab.
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource
  7. ShanghaiTech Univ. (China). School of Physical Science and Technology; Univ. of Oxford (United Kingdom). Physics Dept.
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pohang Univ. of Science and Technology (Korea, Republic of)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Research Foundation of Korea (NRF)
Contributing Org.:
Stanford Univ., CA (United States); ShanghaiTech Univ. (China); Univ. of Oxford (United Kingdom)
OSTI Identifier:
1349067
Alternate Identifier(s):
OSTI ID: 1337447; OSTI ID: 1339626; OSTI ID: 1393598
Grant/Contract Number:  
AC02-05CH11231; AC02-76SF00515; 2011-0030787
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 117; Journal Issue: 26; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

He, Junfeng, Zhang, Chaofan, Ghimire, Nirmal J., Liang, Tian, Jia, Chunjing, Jiang, Juan, Tang, Shujie, Chen, Sudi, He, Yu, Mo, S. -K., Hwang, C. C., Hashimoto, M., Lu, D. H., Moritz, B., Devereaux, T. P., Chen, Y. L., Mitchell, J. F., and Shen, Z. -X. Distinct electronic structure for the extreme magnetoresistance in YSb. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.117.267201.
He, Junfeng, Zhang, Chaofan, Ghimire, Nirmal J., Liang, Tian, Jia, Chunjing, Jiang, Juan, Tang, Shujie, Chen, Sudi, He, Yu, Mo, S. -K., Hwang, C. C., Hashimoto, M., Lu, D. H., Moritz, B., Devereaux, T. P., Chen, Y. L., Mitchell, J. F., & Shen, Z. -X. Distinct electronic structure for the extreme magnetoresistance in YSb. United States. doi:10.1103/PhysRevLett.117.267201.
He, Junfeng, Zhang, Chaofan, Ghimire, Nirmal J., Liang, Tian, Jia, Chunjing, Jiang, Juan, Tang, Shujie, Chen, Sudi, He, Yu, Mo, S. -K., Hwang, C. C., Hashimoto, M., Lu, D. H., Moritz, B., Devereaux, T. P., Chen, Y. L., Mitchell, J. F., and Shen, Z. -X. Fri . "Distinct electronic structure for the extreme magnetoresistance in YSb". United States. doi:10.1103/PhysRevLett.117.267201. https://www.osti.gov/servlets/purl/1349067.
@article{osti_1349067,
title = {Distinct electronic structure for the extreme magnetoresistance in YSb},
author = {He, Junfeng and Zhang, Chaofan and Ghimire, Nirmal J. and Liang, Tian and Jia, Chunjing and Jiang, Juan and Tang, Shujie and Chen, Sudi and He, Yu and Mo, S. -K. and Hwang, C. C. and Hashimoto, M. and Lu, D. H. and Moritz, B. and Devereaux, T. P. and Chen, Y. L. and Mitchell, J. F. and Shen, Z. -X.},
abstractNote = {An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Moreover, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.},
doi = {10.1103/PhysRevLett.117.267201},
journal = {Physical Review Letters},
number = 26,
volume = 117,
place = {United States},
year = {Fri Dec 23 00:00:00 EST 2016},
month = {Fri Dec 23 00:00:00 EST 2016}
}

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Cited by: 12 works
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Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865