High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
Abstract
Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi2O2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi2O2Se was found to increase as thinning down to the monolayer due to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm2 V-1 s-1 was achieved in as-grown Bi2O2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi2O2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi2O2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.
- Authors:
-
- Peking Univ., Beijing (China). Center for Nanochemistry, Beijing National Lab. for Molecular Sciences (BNLMS)
- Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
- Peking Univ., Beijing (China). State Key Lab. for the Physics and Chemistry of Nanodevices
- Univ. of Oxford (United Kingdom). Dept. of Physics and Clarendon Lab.
- Max Planck Inst. for Chemical Physics of Solids, Dresden (Germany); ShanghaiTech Univ. (China). School of Physical Science and Technology
- Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1348989
- Grant/Contract Number:
- AC02-76SF00515
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Nature Nanotechnology
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 3; Journal ID: ISSN 1748-3387
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; electronic devices; electronic properties and devices; two-dimensional materials
Citation Formats
Wu, Jinxiong, Yuan, Hongtao, Meng, Mengmeng, Chen, Cheng, Sun, Yan, Chen, Zhuoyu, Dang, Wenhui, Tan, Congwei, Liu, Yujing, Yin, Jianbo, Zhou, Yubing, Huang, Shaoyun, Xu, H. Q., Cui, Yi, Hwang, Harold Y., Liu, Zhongfan, Chen, Yulin, Yan, Binghai, and Peng, Hailin. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. United States: N. p., 2017.
Web. doi:10.1038/nnano.2017.43.
Wu, Jinxiong, Yuan, Hongtao, Meng, Mengmeng, Chen, Cheng, Sun, Yan, Chen, Zhuoyu, Dang, Wenhui, Tan, Congwei, Liu, Yujing, Yin, Jianbo, Zhou, Yubing, Huang, Shaoyun, Xu, H. Q., Cui, Yi, Hwang, Harold Y., Liu, Zhongfan, Chen, Yulin, Yan, Binghai, & Peng, Hailin. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. United States. https://doi.org/10.1038/nnano.2017.43
Wu, Jinxiong, Yuan, Hongtao, Meng, Mengmeng, Chen, Cheng, Sun, Yan, Chen, Zhuoyu, Dang, Wenhui, Tan, Congwei, Liu, Yujing, Yin, Jianbo, Zhou, Yubing, Huang, Shaoyun, Xu, H. Q., Cui, Yi, Hwang, Harold Y., Liu, Zhongfan, Chen, Yulin, Yan, Binghai, and Peng, Hailin. 2017.
"High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se". United States. https://doi.org/10.1038/nnano.2017.43. https://www.osti.gov/servlets/purl/1348989.
@article{osti_1348989,
title = {High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se},
author = {Wu, Jinxiong and Yuan, Hongtao and Meng, Mengmeng and Chen, Cheng and Sun, Yan and Chen, Zhuoyu and Dang, Wenhui and Tan, Congwei and Liu, Yujing and Yin, Jianbo and Zhou, Yubing and Huang, Shaoyun and Xu, H. Q. and Cui, Yi and Hwang, Harold Y. and Liu, Zhongfan and Chen, Yulin and Yan, Binghai and Peng, Hailin},
abstractNote = {Identifying new two-dimensional (2D) materials with both high carrier mobility and a large electronic band gap is critical for novel electronics and optoelectronics applications. Here, we demonstrated a new air-stable ultrahigh-mobility layered Bi2O2Se semiconductor with a large band gap of ~ 0.8 eV and a low effective mass of ~ 0.14 m0. High-quality 2D Bi2O2Se crystals with a thickness down to a monolayer and a domain size greater than 200 μm were readily grown by chemical vapor deposition (CVD). Size-tunable band gap of Bi2O2Se was found to increase as thinning down to the monolayer due to the quantum confinement effect. An ultrahigh Hall mobility of > 20,000 cm2 V-1 s-1 was achieved in as-grown Bi2O2Se flakes at 1.9 K, which allows for the observation of Shubnikov–de Haas quantum oscillations. Top-gated field-effect transistors based on CVD-grown 2D Bi2O2Se crystals (down to bilayer) exhibited high Hall mobility (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swings (~65 mV/dec) at room temperature. Our results make the high-mobility 2D Bi2O2Se semiconductor a promising candidate for future high-speed and low-power electronic applications.},
doi = {10.1038/nnano.2017.43},
url = {https://www.osti.gov/biblio/1348989},
journal = {Nature Nanotechnology},
issn = {1748-3387},
number = 3,
volume = 12,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2017},
month = {Mon Apr 03 00:00:00 EDT 2017}
}
Web of Science
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- Wang, Hong; Sandoz‐Rosado, Emil J.; Tsang, Siu Hon
- Advanced Functional Materials, Vol. 29, Issue 31
Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi 2 O 2 Se Nanosheets
journal, September 2019
- Tong, Tong; Chen, Yunfeng; Qin, Shuchao
- Advanced Functional Materials, Vol. 29, Issue 50
Seed‐Induced Vertical Growth of 2D Bi 2 O 2 Se Nanoplates by Chemical Vapor Transport
journal, September 2019
- Wu, Zhen; Liu, Guoliang; Wang, Yuxi
- Advanced Functional Materials, Vol. 29, Issue 50
An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide
journal, June 2018
- Tian, Xiangling; Luo, Hongyu; Wei, Rongfei
- Advanced Materials, Vol. 30, Issue 31
Synergistical Enhancement of Thermoelectric Properties in n‐Type Bi 2 O 2 Se by Carrier Engineering and Hierarchical Microstructure
journal, July 2019
- Tan, Xing; Liu, Yaochun; Liu, Rui
- Advanced Energy Materials, Vol. 9, Issue 31
Space‐confined microwave synthesis of ternary‐layered BiOCl crystals with high‐performance ultraviolet photodetection
journal, August 2019
- Kang, Lixing; Yu, Xuechao; Zhao, Xiaoxu
- InfoMat, Vol. 2, Issue 3
Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures
journal, January 2019
- Zhang, Le; Shu, Tianyu; Wu, Huizhen
- physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 5
Bolometric Effect in Bi 2 O 2 Se Photodetectors
journal, September 2019
- Yang, Hang; Tan, Congwei; Deng, Chuyun
- Small, Vol. 15, Issue 43
Bi2ZnOB2O6: a polar material capable of photocatalytic degradation of Rhodamine B
journal, June 2018
- Liu, Jian; Zhao, Wenwu; Wang, Bo
- Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 16
Salt-assisted chemical vapor deposition of two-dimensional materials
journal, August 2019
- Han, Wei; Liu, Kailang; Yang, Sanjun
- Science China Chemistry, Vol. 62, Issue 10
Electric-field-tuned topological phase transition in ultrathin Na3Bi
journal, December 2018
- Collins, James L.; Tadich, Anton; Wu, Weikang
- Nature, Vol. 564, Issue 7736
Nonequilibrium Magnetic Oscillation with Cylindrical Vector Beams
journal, October 2018
- Fujita, Hiroyuki; Sato, Masahiro
- Scientific Reports, Vol. 8, Issue 1
Recent advances in ternary two-dimensional materials: synthesis, properties and applications
journal, January 2017
- Wang, Lina; Hu, Peng; Long, Yi
- Journal of Materials Chemistry A, Vol. 5, Issue 44
2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection
journal, January 2018
- Wang, Feng; Wang, Zhenxing; Yin, Lei
- Chemical Society Reviews, Vol. 47, Issue 16
Bismuth oxysulfide modified ZnO nanorod arrays as an efficient electron transport layer for inverted polymer solar cells
journal, January 2019
- Wu, Zuping; Yu, Huangzhong; Shi, Shengwei
- Journal of Materials Chemistry A, Vol. 7, Issue 24
Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In 2 Se 3 for Flexible Broadband Photodetectors
journal, March 2019
- Tang, Lei; Teng, Changjiu; Luo, Yuting
- Research, Vol. 2019
Chemical Patterning of High-Mobility Semiconducting 2D Bi 2 O 2 Se Crystals for Integrated Optoelectronic Devices
journal, October 2017
- Wu, Jinxiong; Liu, Yujing; Tan, Zhenjun
- Advanced Materials, Vol. 29, Issue 44
Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility
journal, July 2018
- Guo, Yu; Gao, Nan; Bai, Yizhen
- Frontiers of Physics, Vol. 13, Issue 4
Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure
journal, September 2019
- Yang, Tao; Li, Xing; Wang, Liming
- Journal of Materials Science, Vol. 54, Issue 24
Strong spin-orbit interaction and magnetotransport in semiconductor Bi$_2$O$_2$Se nanoplates
text, January 2018
- Meng, Mengmeng; Huang, Shaoyun; Tan, Congwei
- arXiv