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Title: The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1]
  1. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1348949
Grant/Contract Number:
10122
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 8; Related Information: CHORUS Timestamp: 2018-02-14 23:30:26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction. United States: N. p., 2017. Web. doi:10.1063/1.4977422.
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., & Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction. United States. doi:10.1063/1.4977422.
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. Mon . "The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction". United States. doi:10.1063/1.4977422.
@article{osti_1348949,
title = {The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction},
author = {Chambers, Scott A. and Du, Yingge and Comes, Ryan B. and Spurgeon, Steven R. and Sushko, Peter V.},
abstractNote = {},
doi = {10.1063/1.4977422},
journal = {Applied Physics Letters},
number = 8,
volume = 110,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2017},
month = {Mon Feb 20 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4977422

Citation Metrics:
Cited by: 3works
Citation information provided by
Web of Science

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  • We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO{sub 3} with SrTiO{sub 3}(001) and LaAlO{sub 3}(001). 28 u.c. BaSnO{sub 3} epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO{sub 3} films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO{sub 3} than in SrTiO{sub 3} and LaAlO{sub 3} by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate atmore » ambient temperature, since electrons generated in the SrTiO{sub 3} by modulation doping, or at the BaSnO{sub 3}/LaAlO{sub 3} interface by polarization doping, can be transferred to and at least partially confined in the BaSnO{sub 3} film.« less
  • SrTiO{sub 3} (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO{sub 3}){sub 0.3}-(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility with STO and the strain-induced ferroelectric response in STO films grown on LSAT. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STOmore » films deposited using two different molecular beam epitaxy approaches. We find that the valence band offset ranges from +0.2(1) eV to −0.2(1) eV depending on the film surface termination. From these results, we extract a conduction band offset from −2.4(1) eV to −2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.« less
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