skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Abstract

Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO 3/SrTiO 3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO 3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO 3/SrTiO 3 interface.

Authors:
 [1];  [2];  [2];  [1];  [1];  [3];  [3];  [2]
  1. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
  2. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1348871
Grant/Contract Number:
AC02-76SF00515; N00014-12-1-0976
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 10; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; disorder; ionic liquid gating; nonlinear Hall effect; oxide interface; quantum confinement; SrTiO3 dielectric constant

Citation Formats

Chen, Zhuoyu, Yuan, Hongtao, Xie, Yanwu, Lu, Di, Inoue, Hisashi, Hikita, Yasuyuki, Bell, Christopher, and Hwang, Harold Y. Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System. United States: N. p., 2016. Web. doi:10.1021/acs.nanolett.6b02348.
Chen, Zhuoyu, Yuan, Hongtao, Xie, Yanwu, Lu, Di, Inoue, Hisashi, Hikita, Yasuyuki, Bell, Christopher, & Hwang, Harold Y. Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System. United States. doi:10.1021/acs.nanolett.6b02348.
Chen, Zhuoyu, Yuan, Hongtao, Xie, Yanwu, Lu, Di, Inoue, Hisashi, Hikita, Yasuyuki, Bell, Christopher, and Hwang, Harold Y. Thu . "Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System". United States. doi:10.1021/acs.nanolett.6b02348. https://www.osti.gov/servlets/purl/1348871.
@article{osti_1348871,
title = {Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System},
author = {Chen, Zhuoyu and Yuan, Hongtao and Xie, Yanwu and Lu, Di and Inoue, Hisashi and Hikita, Yasuyuki and Bell, Christopher and Hwang, Harold Y.},
abstractNote = {Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. Furthermore, in order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. By utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson–Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. This study provides a broad framework for understanding various reported phenomena at the LaAlO3/SrTiO3 interface.},
doi = {10.1021/acs.nanolett.6b02348},
journal = {Nano Letters},
number = 10,
volume = 16,
place = {United States},
year = {Thu Sep 08 00:00:00 EDT 2016},
month = {Thu Sep 08 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 6works
Citation information provided by
Web of Science

Save / Share: