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Title: Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

Abstract

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Inventors:
; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1348367
Patent Number(s):
9,608,141
Application Number:
14/968,252
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION DOEEE
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Dec 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices. United States: N. p., 2017. Web.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices. United States.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue . "Fluorinated tin oxide back contact for AZTSSe photovoltaic devices". United States. doi:. https://www.osti.gov/servlets/purl/1348367.
@article{osti_1348367,
title = {Fluorinated tin oxide back contact for AZTSSe photovoltaic devices},
author = {Gershon, Talia S. and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},
abstractNote = {A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}

Patent:

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