skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

Abstract

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Inventors:
; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1348367
Patent Number(s):
9,608,141
Application Number:
14/968,252
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION DOEEE
DOE Contract Number:
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Dec 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices. United States: N. p., 2017. Web.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices. United States.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue . "Fluorinated tin oxide back contact for AZTSSe photovoltaic devices". United States. doi:. https://www.osti.gov/servlets/purl/1348367.
@article{osti_1348367,
title = {Fluorinated tin oxide back contact for AZTSSe photovoltaic devices},
author = {Gershon, Talia S. and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},
abstractNote = {A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}

Patent:

Save / Share:
  • A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
  • Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.
  • Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.
  • A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally,more » the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.« less
  • Additional hydrogen (H{sub 2}) annealing and subsequent electrochemical treatment are found to make tin-doped indium oxide (ITO)-based photoelectrodes suitable for highly efficient dye sensitized solar cells. The additional H{sub 2} annealing process recovered the electrical conductivity of the ITO film the same as its initial high conductivity, which enhanced the charge collecting property. Moreover, the employment of electrochemical oxidation of TiO{sub 2}/ITO photoelectrode improved the energy conversion efficiency of the ITO-based dye-sensitized solar cells (DSSC), higher than that of a conventional FTO-based DSSC. Electrochemical impedance analysis showed that the H2 annealing process reduced the internal resistance of the cell, i.e.,more » the resistance of the ITO and the Schottky barrier at the TiO{sub 2}/ITO interface were reduced, and that the electrochemical treatment recovered the diodelike characteristics of the DSSC by retarding back electron transfer from the photoelectrode to the electrolyte. The present work demonstrates that thermally and electrochemically modified ITO-based photoelectrode is another alternative to the conventionally used FTO-based photoelectrode.« less