A single-atom quantum memory in silicon

Freer, Solomon; Simmons, Stephanie; Laucht, Arne; Muhonen, Juha T.; Dehollain, Juan P.; Kalra, Rachpon; Mohiyaddin, Fahd A.; Hudson, Fay E.; Itoh, Kohei M.; McCallum, Jeffrey C.; Jamieson, David N.; Dzurak, Andrew S.; Morello, Andrea

doi:10.1088/2058-9565/aa63a4

Title: A single-atom quantum memory in silicon

Journal Article · Mon Mar 20 00:00:00 EDT 2017 · Quantum Science and Technology

DOI:https://doi.org/10.1088/2058-9565/aa63a4· OSTI ID:1348332

Freer, Solomon ^[1]; Simmons, Stephanie ^[1]; Laucht, Arne ^[1]; Muhonen, Juha T. ^[1];

^[1]; Kalra, Rachpon ^[1]; Mohiyaddin, Fahd A. ^[1]; Hudson, Fay E. ^[2]; Itoh, Kohei M. ^[3]; McCallum, Jeffrey C. ^[4]; Jamieson, David N. ^[4]; Dzurak, Andrew S. ^[1];

^[1]

Univ. of New South Wales, Sydney, NSW (Australia)
Univ. of New South Wales, Sydney, NSW (Australia); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Keio Univ., Hiyoshi (Japan)
Univ. of Melbourne (Australia)

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The ³¹P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the ³¹P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched ²⁸Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1348332

Journal Information:: Quantum Science and Technology, Vol. 2, Issue 1; ISSN 2058-9565

Publisher:: IOPscienceCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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