skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Surface phases of the transition-metal dichalcogenide IrT e 2

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1348282
Grant/Contract Number:  
SC0012432
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 9; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Chen, Kim, Jisun, Yang, Yifan, Cao, Guixin, Jin, Rongying, and Plummer, E. W. Surface phases of the transition-metal dichalcogenide IrT e 2. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.094118.
Chen, Chen, Kim, Jisun, Yang, Yifan, Cao, Guixin, Jin, Rongying, & Plummer, E. W. Surface phases of the transition-metal dichalcogenide IrT e 2. United States. doi:10.1103/PhysRevB.95.094118.
Chen, Chen, Kim, Jisun, Yang, Yifan, Cao, Guixin, Jin, Rongying, and Plummer, E. W. Fri . "Surface phases of the transition-metal dichalcogenide IrT e 2". United States. doi:10.1103/PhysRevB.95.094118.
@article{osti_1348282,
title = {Surface phases of the transition-metal dichalcogenide IrT e 2},
author = {Chen, Chen and Kim, Jisun and Yang, Yifan and Cao, Guixin and Jin, Rongying and Plummer, E. W.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.094118},
journal = {Physical Review B},
number = 9,
volume = 95,
place = {United States},
year = {Fri Mar 24 00:00:00 EDT 2017},
month = {Fri Mar 24 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.95.094118

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

MoS2 Nanoparticles Grown on Graphene An Advanced Catalyst for the Hydrogen Evolution Reaction
journal, May 2011

  • Li, Yanguang; Wang, Hailiang; Xie, Liming
  • Journal of the American Chemical Society, Vol. 133, Issue 19, p. 7296-7299
  • DOI: 10.1021/ja201269b

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

  • Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki
  • Nature Chemistry, Vol. 5, Issue 4, p. 263-275
  • DOI: 10.1038/nchem.1589

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279