skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime

Abstract

Goos-Hänchen (G-H) effect is of great interest in the manipulation of optical beams. However, it is still fairly challenging to attain efficient controls of the G-H shift for diverse applications. Here, we propose a mechanism to realize tunable G-H shift in the terahertz regime with electrically controllable graphene. Taking monolayer graphene covered epsilon-near-zero metamaterial as a planar model system, it is found that the G-H shift for the orthogonal s-polarized and p-polarized terahertz beams at oblique incidence are positive and negative, respectively. The G-H shift can be modified substantially by electrically controlling the Fermi energy of the monolayer graphene. Reversely, the Fermi energy dependent G-H effect can also be used as a strategy for measuring the doping level of graphene. In addition, the G-H shifts of the system are of strong frequency-dependence at oblique angles of incidence, therefore the proposed graphene hybrid system can potentially be used for the generation of terahertz “rainbow”, a flat analog of the dispersive prism in optics. The proposed scheme of hybrid system involving graphene for dynamic control of G-H shift will have potential applications in the manipulation of terahertz waves.

Authors:
 [1];  [2];  [1];  [3];  [3];  [4];  [1];  [2];  [2];  [5]
  1. Northwestern Polytechnical Univ., Xi'an (China). Key Lab. of Space Applied Physics and Chemistry, Ministry of Education and Dept. of Applied Physics, School of Science
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
  3. Tongji Univ., Shanghai (China). Key Lab. of Advanced Micro-structure Materials (MOE) and School of Physics Science and Engineering
  4. Tsinghua Univ., Beijing (China). State Key Lab. of Tribology, Dept. of Mechanical Engineering
  5. Ames Lab. and Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy; Inst. of Electronic Structure and Laser (FORTH), Crete (Greece)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Office of Naval Research; European Research Council (ERC); National Science Foundation of China (NSFC)
OSTI Identifier:
1347893
Report Number(s):
IS-J-9229
Journal ID: ISSN 2195-1071
Grant/Contract Number:
AC02-07CH11358; N00014-14-1-0474; 61505164; 61275176; 11372248; 11404213; 3102015ZY079; 3102015ZY058; 320081
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 11; Journal ID: ISSN 2195-1071
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; graphene; metamaterials; surface conductivity; Goos-Hänchen shift; terahertz; tunability

Citation Formats

Fan, Yuancheng, Shen, Nian-Hai, Zhang, Fuli, Wei, Zeyong, Li, Hongqiang, Zhao, Qian, Fu, Quanhong, Zhang, Peng, Koschny, Thomas, and Soukoulis, Costas M. Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime. United States: N. p., 2016. Web. doi:10.1002/adom.201600303.
Fan, Yuancheng, Shen, Nian-Hai, Zhang, Fuli, Wei, Zeyong, Li, Hongqiang, Zhao, Qian, Fu, Quanhong, Zhang, Peng, Koschny, Thomas, & Soukoulis, Costas M. Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime. United States. doi:10.1002/adom.201600303.
Fan, Yuancheng, Shen, Nian-Hai, Zhang, Fuli, Wei, Zeyong, Li, Hongqiang, Zhao, Qian, Fu, Quanhong, Zhang, Peng, Koschny, Thomas, and Soukoulis, Costas M. 2016. "Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime". United States. doi:10.1002/adom.201600303. https://www.osti.gov/servlets/purl/1347893.
@article{osti_1347893,
title = {Electrically Tunable Goos-Hänchen Effect with Graphene in the Terahertz Regime},
author = {Fan, Yuancheng and Shen, Nian-Hai and Zhang, Fuli and Wei, Zeyong and Li, Hongqiang and Zhao, Qian and Fu, Quanhong and Zhang, Peng and Koschny, Thomas and Soukoulis, Costas M.},
abstractNote = {Goos-Hänchen (G-H) effect is of great interest in the manipulation of optical beams. However, it is still fairly challenging to attain efficient controls of the G-H shift for diverse applications. Here, we propose a mechanism to realize tunable G-H shift in the terahertz regime with electrically controllable graphene. Taking monolayer graphene covered epsilon-near-zero metamaterial as a planar model system, it is found that the G-H shift for the orthogonal s-polarized and p-polarized terahertz beams at oblique incidence are positive and negative, respectively. The G-H shift can be modified substantially by electrically controlling the Fermi energy of the monolayer graphene. Reversely, the Fermi energy dependent G-H effect can also be used as a strategy for measuring the doping level of graphene. In addition, the G-H shifts of the system are of strong frequency-dependence at oblique angles of incidence, therefore the proposed graphene hybrid system can potentially be used for the generation of terahertz “rainbow”, a flat analog of the dispersive prism in optics. The proposed scheme of hybrid system involving graphene for dynamic control of G-H shift will have potential applications in the manipulation of terahertz waves.},
doi = {10.1002/adom.201600303},
journal = {Advanced Optical Materials},
number = 11,
volume = 4,
place = {United States},
year = 2016,
month = 7
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 8works
Citation information provided by
Web of Science

Save / Share:
  • We propose a method of realizing an effective electron spin beam splitter in graphene through the Goos-Hänchen effect. The device consists of a layer of monolayer graphene on which two ferromagnetic stripes are deposited with parallel or antiparallel magnetization configuration. It is shown that the transmitted spin-up and spin-down electron beams are found at different longitudinal positions and their spatial separation can be enhanced by the number of transmission resonances formed between the two ferromagnetic stripes. The spatial separation between the spin-up and spin-down electron beams can reach values up to hundreds of wavelengths, which can be observed experimentally.
  • For magnon spintronic applications, the detailed knowledge of spin wave (SW) beam dispersion, transmission (reflection) of SWs passing through (reflected from) interfaces, or borders or the scattering of SWs by inhomogeneities is crucial. These wave properties are decisive factors on the usefulness of a particular device. Here, we demonstrate, using micromagnetic simulations supported by an analytical model, that the Goos-Hänchen (GH) shift exists for SW reflecting from thin film edge and that with the effect becomes observable. We show that this effect will exist for a broad range of frequencies in the dipole-exchange range, with the magnetization degree of pinningmore » at the film edge as the crucial parameter, whatever its nature. Moreover, we have also found that the GH effect can be accompanied or even dominating by a bending of the SW beam due to the inhomogeneity of the internal magnetic field. This inhomogeneity, created by demagnetizing field taking place at the film edge, causes gradual change of SWs refractive index. The refraction of the SW beams by the non-uniformity of the magnetic field enables the exploration of graded index magnonics and metamaterial properties for the transmission and processing of information at nanoscale.« less
  • In this paper, we design and numerically demonstrate an electrically controllable light-matter interaction in a hybrid material/metamaterial system consisting of an artificially constructed cross cut-wire complementary metamaterial and an atomically thin graphene layer to realize terahertz (THz) wave modulator. By applying a bias voltage between the metamaterial and the graphene layer, this modulator can dynamically control the amplitude and phase of the transmitted wave near 1.43 THz. Moreover, the distributions of current density show that this large modulation depth can be attributed to the resonant electric field parallel to the graphene sheet. Therefore, the modulator performance indicates the enormous potentialmore » of graphene for developing sophisticated THz communication systems.« less
  • A scheme of enhanced Goos-Hänchen (GH) shifts in reflected and transmitted light beams is exploited in a cavity, where an asymmetric double AlGaAs/GaAs quantum well structure with resonant tunneling to a common continuum is employed as the intracavity medium. With the help of Fano-type interference induced by resonant tunneling, the generated GH shifts that contain a negative lateral shift in reflected light beam and a positive lateral shift in transmitted light beam are found to be significantly enhanced. More interestingly, these GH shifts in reflected and transmitted light beams are modulated by means of a control beam and external biasmore » voltage, in which maximum negative shift of 1.86 mm and positive shift of 0.37 mm are achievable.« less
  • We have theoretically studied the Goos-Hänchen-like shift of spinor-unpolarized beams tunneling through various gate-biased silicene nanostructures. Following the stationary-phase method, lateral displacement in single-, dual-, and multiple-gated silicene systems has been systematically demonstrated. It is shown for simple single-gated silicene that lateral displacement can be generally enhanced by Fabry-Perot interference, and near the transition point turning on the evanescent mode a very large lateral shift could be observed. For the dual-gated structure, we have also shown the crucial role of localized modes like quantum well states in enhancing the beam lateral displacement, while for the multiple gate-biased systems the resultingmore » superlattice subbands are also favorable for lateral displacement enhancement. Importantly, including the degeneracy-broken mechanisms such as gate-field and magnetic modulations, a fully spinor-resolved beam can be distinguished from the rest counterparts by aligning the incident beam with a proper spinor-resolved transition point, localized state, and subband, all of which can be flexibly modulated via electric means, offering the very desirable strategies to achieve the fully spinor-polarized beam for functional electronic applications.« less