MoS2 transistors with 1-nanometer gate lengths

Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C.; Wong, H. -. S. P.; Javey, A.

doi:10.1126/science.aah4698

Title: MoS2 transistors with 1-nanometer gate lengths

Journal Article · Thu Oct 06 00:00:00 EDT 2016 · Science

DOI:https://doi.org/10.1126/science.aah4698· OSTI ID:1347831

Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C.; Wong, H. -. S. P.; Javey, A.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1347831

Journal Information:: Science, Journal Name: Science Vol. 354 Journal Issue: 6308; ISSN 0036-8075

Publisher:: American Association for the Advancement of Science (AAAS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 898 works

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