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Title: Method and system for continuous atomic layer deposition

Patent ·
OSTI ID:1347583
; ;

A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UCHICAGO ARGONNE, LLC
Patent Number(s):
9,598,769
Application Number:
14/339,058
OSTI ID:
1347583
Resource Relation:
Patent File Date: 2014 Jul 23
Country of Publication:
United States
Language:
English

References (10)

Deposition methods patent October 2002
Transient enhanced atomic layer deposition patent July 2011
Process for atomic layer deposition patent June 2012
Roll-to-roll atomic layer deposition method and system patent November 2012
Spatially controlled atomic layer deposition in porous materials patent November 2012
Systems for forming semiconductor materials by atomic layer deposition patent July 2013
Methods for forming semiconductor materials by atomic layer deposition using halide precursors patent July 2014
Method of applying atomic layer deposition coatings onto porous non-ceramic substrates patent October 2014
Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects patent-application December 2007
Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition
  • Poodt, Paul; Cameron, David C.; Dickey, Eric
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 1, Article No. 010802 https://doi.org/10.1116/1.3670745
journal January 2012

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY