skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Visible light laser voltage probing on thinned substrates

Abstract

The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1347574
Patent Number(s):
9,599,667
Application Number:
14/836,713
Assignee:
Sandia Corporation SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Aug 26
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Beutler, Joshua, Clement, John Joseph, Miller, Mary A., Stevens, Jeffrey, and Cole, Jr., Edward I. Visible light laser voltage probing on thinned substrates. United States: N. p., 2017. Web.
Beutler, Joshua, Clement, John Joseph, Miller, Mary A., Stevens, Jeffrey, & Cole, Jr., Edward I. Visible light laser voltage probing on thinned substrates. United States.
Beutler, Joshua, Clement, John Joseph, Miller, Mary A., Stevens, Jeffrey, and Cole, Jr., Edward I. Tue . "Visible light laser voltage probing on thinned substrates". United States. https://www.osti.gov/servlets/purl/1347574.
@article{osti_1347574,
title = {Visible light laser voltage probing on thinned substrates},
author = {Beutler, Joshua and Clement, John Joseph and Miller, Mary A. and Stevens, Jeffrey and Cole, Jr., Edward I.},
abstractNote = {The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {3}
}

Patent:

Save / Share: