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Title: Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions

Abstract

Techniques for coupling light into graphene using a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor and at least one graphene layer positioned in proximity to the planar photonic crystal to at least partially overlap with an evanescent field of the resonant cavity. At least one mode of the resonant cavity can couple into the graphene layer via evanescent coupling. The optical properties of the graphene layer can be controlled, and characteristics of the graphene-cavity system can be detected. Coupling light into graphene can include electro-optic modulation of light, photodetection, saturable absorption, bistability, and autocorrelation.

Inventors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1347571
Patent Number(s):
9,599,770
Application Number:
14/501,735
Assignee:
The Trustees of Columbia University in the City of New York BNL
DOE Contract Number:
AC02-98CH10886; SC0001088; SC0001085
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Citation Formats

Englund, Dirk R., and Gan, Xuetao. Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions. United States: N. p., 2017. Web.
Englund, Dirk R., & Gan, Xuetao. Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions. United States.
Englund, Dirk R., and Gan, Xuetao. Tue . "Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions". United States. doi:. https://www.osti.gov/servlets/purl/1347571.
@article{osti_1347571,
title = {Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions},
author = {Englund, Dirk R. and Gan, Xuetao},
abstractNote = {Techniques for coupling light into graphene using a planar photonic crystal having a resonant cavity characterized by a mode volume and a quality factor and at least one graphene layer positioned in proximity to the planar photonic crystal to at least partially overlap with an evanescent field of the resonant cavity. At least one mode of the resonant cavity can couple into the graphene layer via evanescent coupling. The optical properties of the graphene layer can be controlled, and characteristics of the graphene-cavity system can be detected. Coupling light into graphene can include electro-optic modulation of light, photodetection, saturable absorption, bistability, and autocorrelation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 21 00:00:00 EDT 2017},
month = {Tue Mar 21 00:00:00 EDT 2017}
}

Patent:

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  • An improved Mach-Zehnder integrated optical electro-optic modulator is achieved by application and incorporation of a DC bias box containing a laser synchronized trigger circuit, a DC ramp and hold circuit, a modulator transfer function negative peak detector circuit, and an adjustable delay circuit. The DC bias box ramps the DC bias along the transfer function curve to any desired phase or point of operation at which point the RF modulation takes place. 7 figs.
  • An improved Mach-Zehnder integrated optical electro-optic modulator is achieved by application and incorporation of a DC bias box containing a laser synchronized trigger circuit, a DC ramp and hold circuit, a modulator transfer function negative peak detector circuit, and an adjustable delay circuit. The DC bias box ramps the DC bias along the transfer function curve to any desired phase or point of operation at which point the RF modulation takes place.
  • An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second setmore » of layers has a lattice constant larger than the lattice constant of the layers in the first set.« less
  • An intrinsic semiconductor electro-optical device is described comprising a pair of spaced electrodes operably connected to a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 ..mu..m and which consists of semiconductor materials of the III-V family. The radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The two semiconductors when in bulk form have mismatched lattice constants, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layermore » of the pair being inversely proportional to the ratio of the layer thicknesses of each layer in the pair. A first of the alternating III-V semiconductor layer is InAs/sub 1-x/Sb/sub x/ wherein x is about 0.5-0.7, and the second of the alternating layers comprising a III-V semiconductor having a lattice constant larger that the lattice constant of the first layers. The strain resulting from the mismatch of lattice constants and the ratio of layer thickness is effective to narrow the bandgaps of the first III-V layers, thereby changing the intrinsic radiation absorption characteristics of the layers when cooled to include wavelengths in the 8-12 ..mu..m region which are larger than those to which the individual layers would be responsive, when cooled and in bulk form.« less
  • Abstract not provided.