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Title: Plasmon-assisted optical vias for photonic ASICS

Abstract

The present invention relates to optical vias to optically connect multilevel optical circuits. In one example, the optical via includes a surface plasmon polariton waveguide, and a first optical waveguide formed on a first substrate is coupled to a second optical waveguide formed on a second substrate by the surface plasmon polariton waveguide. In some embodiments, the first optical waveguide includes a transition region configured to convert light from an optical mode to a surface plasmon polariton mode or from a surface plasmon polariton mode to an optical mode.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1347570
Patent Number(s):
9,599,781
Application Number:
14/847,806
Assignee:
Sandia Corporation SNL-A
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Sep 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Skogen, Erik J., Vawter, Gregory A., and Tauke-Pedretti, Anna. Plasmon-assisted optical vias for photonic ASICS. United States: N. p., 2017. Web.
Skogen, Erik J., Vawter, Gregory A., & Tauke-Pedretti, Anna. Plasmon-assisted optical vias for photonic ASICS. United States.
Skogen, Erik J., Vawter, Gregory A., and Tauke-Pedretti, Anna. Tue . "Plasmon-assisted optical vias for photonic ASICS". United States. doi:. https://www.osti.gov/servlets/purl/1347570.
@article{osti_1347570,
title = {Plasmon-assisted optical vias for photonic ASICS},
author = {Skogen, Erik J. and Vawter, Gregory A. and Tauke-Pedretti, Anna},
abstractNote = {The present invention relates to optical vias to optically connect multilevel optical circuits. In one example, the optical via includes a surface plasmon polariton waveguide, and a first optical waveguide formed on a first substrate is coupled to a second optical waveguide formed on a second substrate by the surface plasmon polariton waveguide. In some embodiments, the first optical waveguide includes a transition region configured to convert light from an optical mode to a surface plasmon polariton mode or from a surface plasmon polariton mode to an optical mode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 21 00:00:00 EDT 2017},
month = {Tue Mar 21 00:00:00 EDT 2017}
}

Patent:

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  • A system and method for generating and using broadband surface plasmons in a metal film for characterization of analyte on or near the metal film. The surface plasmons interact with the analyte and generate leakage radiation which has spectral features which can be used to inspect, identify and characterize the analyte. The broadband plasmon excitation enables high-bandwidth photonic applications.
  • A system and method for generating and using broadband surface plasmons in a metal film for characterization of analyte on or near the metal film. The surface plasmons interact with the analyte and generate leakage radiation which has spectral features which can be used to inspect, identify and characterize the analyte. The broadband plasmon excitation enables high-bandwidth photonic applications.
  • A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides. 7 figs.
  • A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides.
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