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Title: Disorder enabled band structure engineering of a topological insulator surface

Abstract

Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. Lastly, at native densities in the model Bi 2X 3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

Authors:
 [1];  [1];  [2];  [1];  [3];  [4];  [5];  [6]
  1. New York Univ., New York, NY (United States)
  2. New York Univ., New York, NY (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Stanford Univ., Stanford, CA (United States)
  4. Stanford Univ., Stanford, CA (United States)
  5. Purdue Univ., West Lafayette, IN (United States)
  6. New York Univ., New York, NY (United States); NYU-ECNU Institute of Physics at NYU Shanghai, Shanghai (China)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1347555
Alternate Identifier(s):
OSTI ID: 1411653
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronic properties and materials; surfaces, interfaces and thin films; topological insulators

Citation Formats

Xu, Yishuai, Chiu, Janet, Miao, Lin, He, Haowei, Alpichshev, Zhanybek, Kapitulnik, A., Biswas, Rudro R., and Wray, L. Andrew. Disorder enabled band structure engineering of a topological insulator surface. United States: N. p., 2017. Web. doi:10.1038/ncomms14081.
Xu, Yishuai, Chiu, Janet, Miao, Lin, He, Haowei, Alpichshev, Zhanybek, Kapitulnik, A., Biswas, Rudro R., & Wray, L. Andrew. Disorder enabled band structure engineering of a topological insulator surface. United States. doi:10.1038/ncomms14081.
Xu, Yishuai, Chiu, Janet, Miao, Lin, He, Haowei, Alpichshev, Zhanybek, Kapitulnik, A., Biswas, Rudro R., and Wray, L. Andrew. Fri . "Disorder enabled band structure engineering of a topological insulator surface". United States. doi:10.1038/ncomms14081. https://www.osti.gov/servlets/purl/1347555.
@article{osti_1347555,
title = {Disorder enabled band structure engineering of a topological insulator surface},
author = {Xu, Yishuai and Chiu, Janet and Miao, Lin and He, Haowei and Alpichshev, Zhanybek and Kapitulnik, A. and Biswas, Rudro R. and Wray, L. Andrew},
abstractNote = {Three-dimensional topological insulators are bulk insulators with Z2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. Lastly, at native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.},
doi = {10.1038/ncomms14081},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {Fri Feb 03 00:00:00 EST 2017},
month = {Fri Feb 03 00:00:00 EST 2017}
}

Journal Article:
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  • ¬© The Author(s) 2017. Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states havemore » significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi 2 X 3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.« less
  • Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In 2Se 3/(Bi 0.5In 0.5) 2Se 3 heterostructure, we introduce a quantum generation of Bi 2Se 3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hallmore » effect in Bi 2Se 3.« less
  • We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi{sub 2}Se{sub 3}, a model TI. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of k{sub z} = Z plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, {approx}0.75, much higher than previously reported. Our results demonstrate that the topological surface state on Bi{sub 2}Se{sub 3} is highly spin polarizedmore » and that the dominant factors limiting the polarization are mainly extrinsic.« less
  • We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi{sub 2}Se{sub 3}, a model TI. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of k{sub z} = Z plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, {approx}0.75, much higher than previously reported. Our results demonstrate that the topological surface state on Bi{sub 2}Se{sub 3} is highly spin polarizedmore » and that the dominant factors limiting the polarization are mainly extrinsic.« less