Analysis of MWIR nBn Devices Built with III-V Superlattices for Strategic Applications on STAMPEDE.
Conference
·
OSTI ID:1347483
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- AFRL
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1347483
- Report Number(s):
- SAND2016-2293C; 621954
- Resource Relation:
- Conference: Proposed for presentation at the Military Sensing Symposium held September 14-17, 2015 in Gaithersburg, VA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxial growth and device applications of III-V quantum dots.
III-V?s from Lab to Fab: Compound Semiconductor Devices and Integration Paths to Manufacturing.
Characterization of the Mechanical Stress Impact on Device Electrical Performance in the CMOS and III-V HEMT/HBT Heterogeneous Integration Environment.
Conference
·
Sun Dec 01 00:00:00 EST 2019
·
OSTI ID:1347483
III-V?s from Lab to Fab: Compound Semiconductor Devices and Integration Paths to Manufacturing.
Conference
·
Wed Jul 01 00:00:00 EDT 2015
·
OSTI ID:1347483
Characterization of the Mechanical Stress Impact on Device Electrical Performance in the CMOS and III-V HEMT/HBT Heterogeneous Integration Environment.
Conference
·
Sat Aug 01 00:00:00 EDT 2015
·
OSTI ID:1347483
+2 more