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Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Journal Article · · Nano Letters
DOI:https://doi.org/10.1021/nl502151k· OSTI ID:1347347
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center. Center for Integrated Nanotechnologies
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In this paper, we demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Finally, low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1347347
Report Number(s):
SAND-2014-1138J; 537321
Journal Information:
Nano Letters, Vol. 14, Issue 10; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 31 works
Citation information provided by
Web of Science

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Cited By (8)

III‐Nitride Micro‐LEDs for Efficient Emissive Displays journal August 2019
Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching journal January 2017
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching journal September 2018
Single photon emission from top-down etched III-nitride quantum dots journal January 2020
Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface journal June 2018
III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures journal January 2018
3D Photoluminescent Nanostructures Containing Quantum Dots Fabricated by Two-Photon Polymerization: Influence of Quantum Dots on the Spatial Resolution of Laser Writing journal November 2018
Author Correction: Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching journal August 2018

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36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
InGaN
photoelectrochemical etching
quantum dots
quantum-size effects