Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Kyoto Univ. (Japan)
- General Atomics, San Diego, CA (United States)
We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowder sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE)
- Grant/Contract Number:
- AC05-00OR22725; RC0304000
- OSTI ID:
- 1347314
- Alternate ID(s):
- OSTI ID: 1396901
- Journal Information:
- Journal of Nuclear Materials, Vol. 488, Issue C; ISSN 0022-3115
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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