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Title: Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

Abstract

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.

Authors:
 [1];  [1];  [2];  [3]; ORCiD logo [2];  [2]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); Shanghai Jiao Tong Univ. (China); Tsung-Dao Lee Inst., Shanghai (China)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1347298
Report Number(s):
BNL-113632-2017-JA
Journal ID: ISSN 2073-4352; CRYSBC; R&D Project: PO010; MA012MABA; KC0201060; KC0202050
Grant/Contract Number:
SC00112704
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Crystals
Additional Journal Information:
Journal Volume: 7; Journal Issue: 2; Journal ID: ISSN 2073-4352
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; topological crystalline insulator; crystal growth; superconductivity

Citation Formats

Zhong, Ruidan, Schneeloch, John, Li, Qiang, Ku, Wei, Tranquada, John, and Gu, Genda. Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1$-$xSnx)1$-$yInyTe: Topological and Superconducting Properties. United States: N. p., 2017. Web. doi:10.3390/cryst7020055.
Zhong, Ruidan, Schneeloch, John, Li, Qiang, Ku, Wei, Tranquada, John, & Gu, Genda. Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1$-$xSnx)1$-$yInyTe: Topological and Superconducting Properties. United States. doi:10.3390/cryst7020055.
Zhong, Ruidan, Schneeloch, John, Li, Qiang, Ku, Wei, Tranquada, John, and Gu, Genda. Thu . "Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1$-$xSnx)1$-$yInyTe: Topological and Superconducting Properties". United States. doi:10.3390/cryst7020055. https://www.osti.gov/servlets/purl/1347298.
@article{osti_1347298,
title = {Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1$-$xSnx)1$-$yInyTe: Topological and Superconducting Properties},
author = {Zhong, Ruidan and Schneeloch, John and Li, Qiang and Ku, Wei and Tranquada, John and Gu, Genda},
abstractNote = {Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb1-xSnx)1-yInyTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, Tc , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.},
doi = {10.3390/cryst7020055},
journal = {Crystals},
number = 2,
volume = 7,
place = {United States},
year = {Thu Feb 16 00:00:00 EST 2017},
month = {Thu Feb 16 00:00:00 EST 2017}
}

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