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Title: Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules

Abstract

We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1347279
Report Number(s):
NREL/PO-5K00-68083
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2017 Photovoltaic Module Reliability Workshop, 28 February - 2 March 2017, Lakewood, Colorado
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; failure analysis; thermal imaging; bypass diode; fielded module; X-ray tomography

Citation Formats

Xiao, Chuanxiao, Uchida, Yasunori, Johnston, Steve, Hacke, Peter, Wohlgemuth, John, and Al-Jassim, Mowafak. Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules. United States: N. p., 2017. Web.
Xiao, Chuanxiao, Uchida, Yasunori, Johnston, Steve, Hacke, Peter, Wohlgemuth, John, & Al-Jassim, Mowafak. Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules. United States.
Xiao, Chuanxiao, Uchida, Yasunori, Johnston, Steve, Hacke, Peter, Wohlgemuth, John, and Al-Jassim, Mowafak. Tue . "Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules". United States. doi:. https://www.osti.gov/servlets/purl/1347279.
@article{osti_1347279,
title = {Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules},
author = {Xiao, Chuanxiao, Uchida, Yasunori and Johnston, Steve and Hacke, Peter and Wohlgemuth, John and Al-Jassim, Mowafak},
abstractNote = {We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 14 00:00:00 EDT 2017},
month = {Tue Mar 14 00:00:00 EDT 2017}
}

Conference:
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